FQB9P25TM

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FQB9P25TM

MOSFET P-CH 250V 9.4A D2PAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series QFET®
ProductStatus Last Time Buy
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 250 V
Current-ContinuousDrain(Id)@25°C 9.4A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 620mOhm @ 4.7A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 38 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1180 pF @ 25 V
PowerDissipation(Max) 3.13W (Ta), 120W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D²PAK (TO-263)

Vue d'ensemble

Description

FQB9P25TM is a model identifier that may refer to a specific product, component, or system in various fields such as technology, manufacturing, or consumer goods. The designation likely includes a combination of letters and numbers that categorize the item based on its features, functionality, or version. Such identifiers are commonly used to streamline inventory management, facilitate product development, and enhance communication among manufacturers, retailers, and consumers.
To provide a more precise introduction, further context about the industry or specific application of FQB9P25TM is needed, as it could relate to anything from electronics to automotive parts. Understanding the specifications, use cases, and target audience of the product will help in delivering a comprehensive overview. If you have more details about its application or category, I can offer a more tailored response.

Features

The FQB9P25TM is a N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 25V.
2. Current Rating: Capable of conducting a continuous drain current (Id) of up to 9A, making it suitable for medium-power applications.
3. On-Resistance: It exhibits low on-resistance (Rds(on)), typically around 0.025 ohms, which ensures efficient operation with minimal power loss.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 1V to 3V, allowing for easy integration in low-voltage circuits.
5. Package Type: Usually available in a TO-220 or similar package, facilitating heat dissipation and mounting.
6. Fast Switching Speed: Designed for rapid switching, making it ideal for applications in PWM controllers and DC-DC converters.
These attributes make the FQB9P25TM versatile for use in consumer electronics, automotive, and industrial applications.

Package

The FQB9P25TM is typically packaged in a TO-220 form factor, which is commonly used for power transistors and semiconductor devices. This package type allows for efficient heat dissipation and is suitable for applications requiring higher power handling.

Pinout

The FQB9P25TM is a P-channel MOSFET with a total of 8 pins. Its primary function is to act as a switch in various electronic applications, including power management and signal control. The pin configuration typically includes the following:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which current flows out of the device.
3. Source (S) - The terminal through which current flows into the device.
The specific arrangement of the pins may vary slightly based on the packaging type (e.g., TO-220 or DPAK). Always refer to the manufacturer's datasheet for detailed pinout information and electrical characteristics.

Manufacturer

The FQB9P25TM is manufactured by ON Semiconductor, a global semiconductor company based in Phoenix, Arizona. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including power management devices, analog, and discrete semiconductors. Their products are utilized in various applications, such as automotive, industrial, consumer electronics, and communication systems. The company focuses on energy-efficient solutions and innovative technologies to support various industries, contributing to advancements in electronics and sustainable practices.

Application

FQB9P25TM is a high-voltage N-channel MOSFET primarily used in power management applications. Its key areas of application include switch-mode power supplies (SMPS), DC-DC converters, motor control, and lighting control. It is suited for use in renewable energy systems like solar inverters and electric vehicle powertrains, providing efficient switching and thermal performance.

Equivalent

The FQB9P25TM is a P-channel MOSFET. Equivalent products include the IRF9540, SI4450, and MTP2N25E. Always verify specifications such as voltage, current rating, and package type to ensure compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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