FQB8P10TM

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FQB8P10TM

POWER FIELD-EFFECT TRANSISTOR, 8

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Spécifications

Package Bulk
Series QFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 8A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 530mOhm @ 4A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 15 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 470 pF @ 25 V
PowerDissipation(Max) 3.75W (Ta), 65W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D2PAK (TO-263)

Vue d'ensemble

Description

FQB8P10TM is a multifunctional product designed for specific applications in various industries, though further context is needed for accurate identification. It typically refers to a type of equipment, component, or technology that integrates advanced features to enhance efficiency, performance, or user experience. The designation suggests a model or version, indicating that it may have been updated or improved from previous iterations.
Products like FQB8P10TM are often utilized in fields such as manufacturing, electronics, or automation, where precision and reliability are critical. Users can expect it to offer benefits like enhanced durability, ease of integration, and compatibility with existing systems. For specific details regarding its specifications, applications, and operational guidelines, it is advisable to consult the manufacturer's documentation or product resources.

Features

The FQB8P10TM is a N-channel MOSFET known for its high efficiency and versatility in various applications. Key features include:
1. Voltage Rating: Typically operates at a maximum drain-source voltage (Vds) of around 100V.
2. Current Rating: Can handle continuous drain current (Id) up to 8A, making it suitable for power management applications.
3. Low RDS(on): Offers a low on-resistance (RDS(on)), which minimizes conduction losses and enhances thermal performance.
4. Fast Switching Speed: Designed for high-speed switching, suitable for applications in power supplies and motor drivers.
5. Package Type: Available in a compact TO-220 package, facilitating effective heat dissipation.
6. Applications: Commonly used in DC-DC converters, power inverters, and other electronic circuit designs where high efficiency is essential.
These features make the FQB8P10TM a reliable choice for engineers looking to optimize performance in power electronics.

Package

The FQB8P10TM is typically packaged in a TO-220 format, which is a common package type for power transistors. This package allows for efficient heat dissipation and is suitable for various electronic applications.

Pinout

The FQB8P10TM is a P-channel MOSFET commonly used in power management applications. It typically comes in a TO-220 package, which has a pin count of 3.
The pin functions are as follows:
1. Gate (G) - The control terminal that regulates the operation of the MOSFET. A negative voltage applied to the gate turns the device on, while 0V or a positive voltage turns it off.
2. Source (S) - The terminal through which current enters the MOSFET. In a P-channel device like the FQB8P10TM, the source is usually connected to a higher voltage.
3. Drain (D) - The terminal through which current exits the MOSFET. This pin connects to the load in the circuit.
This device is typically used in applications requiring low on-resistance and high-speed switching capabilities. Always refer to the specific datasheet for detailed characteristics and ratings.

Manufacturer

The FQB8P10TM is manufactured by ON Semiconductor, a leading semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including power management, analog, and mixed-signal devices, as well as discrete devices like transistors. The company serves various industries, including automotive, industrial, communications, consumer electronics, and medical. ON Semiconductor focuses on providing innovative and energy-efficient solutions, contributing to advancements in technology and sustainability.

Application

The FQB8P10TM is a N-channel MOSFET primarily used in power management applications, including switching power supplies, DC-DC converters, and motor control circuits. Its high efficiency and fast switching capabilities also make it suitable for applications in renewable energy systems, such as solar inverters and electric vehicles, as well as in consumer electronics for efficient power regulation.

Equivalent

The FQB8P10TM is a P-channel MOSFET commonly used in power applications. Equivalent products include the FQP8P10, IRF9610, and MTP8P10. Check specific datasheets for detailed electrical characteristics to ensure compatibility for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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