FQB5N90TM

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FQB5N90TM

MOSFET N-CH 900V 5.4A D2PAK

  • Fabricant
  • Mfr. Partie #FQB5N90TM
  • Paquet TO-263
  • Fiche de données
  • En stock4341

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series QFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 900 V
Current-ContinuousDrain(Id)@25°C 5.4A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 2.3Ohm @ 2.7A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 40 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1550 pF @ 25 V
PowerDissipation(Max) 3.13W (Ta), 158W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D²PAK (TO-263)

Vue d'ensemble

Description

FQB5N90TM is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications, including power management and switching in electronic devices. It features a maximum drain-source voltage (V_DS) of 900 volts and a continuous drain current (I_D) of up to 5 amperes, making it suitable for high-voltage applications.
The device is known for its low on-resistance (R_DS(on)), which reduces power losses and enhances efficiency in power conversion processes. It typically has a fast switching speed, which allows for effective operation in high-frequency applications.
The FQB5N90TM is packaged in a TO-220 format, facilitating heat dissipation and ease of mounting on heatsinks. It is widely used in industries such as automotive, renewable energy, and consumer electronics for applications like DC-DC converters, inverters, and motor drives. Overall, the FQB5N90TM is a reliable choice for engineers seeking efficient and robust solutions in power electronics.

Features

The FQB5N90TM is a N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 900V, making it suitable for high-voltage circuits.
2. Current Rating: The device can handle a continuous drain current (Id) up to 5A, allowing it to be used in various power applications.
3. On-Resistance: The Rds(on) is low, typically around 1.5 ohms, which minimizes power loss and improves efficiency during operation.
4. Gate Threshold Voltage: It has a gate threshold voltage (Vgs(th)) of 2-4V, enabling reliable switching.
5. Fast Switching Speed: The FQB5N90TM offers rapid switching capabilities, making it ideal for applications like power supplies, motor drives, and inverter circuits.
6. Package Type: It typically comes in a TO-220 package, facilitating heat dissipation and ease of mounting.
Overall, the FQB5N90TM is suitable for high-power, high-voltage applications requiring efficient switching performance.

Package

The FQB5N90TM is typically packaged in a TO-220 form factor, which is a standard package for high-power transistors, providing good heat dissipation and easy mounting.

Pinout

The FQB5N90TM is a N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage here allows current to flow from the drain to the source.
2. Drain (D): This pin is where the current enters the MOSFET from the load. The drain current is controlled by the gate voltage.
3. Source (S): This pin is the exit for the current. It connects to the ground or the lower potential in the circuit.
The FQB5N90TM is commonly used in various applications such as switching, amplification, and power management due to its high voltage and current handling capabilities.

Manufacturer

The FQB5N90TM is manufactured by Fairchild Semiconductor, which is a well-known company in the semiconductor industry. Fairchild specializes in designing and producing a broad range of semiconductor products, including power management, analog, and discrete components. They are recognized for their innovations in power semiconductor technology, making them a key player in the electronics sector. Fairchild Semiconductor was founded in 1957 and has played a significant role in the development of modern electronics. In 2016, it was acquired by ON Semiconductor, further expanding its capabilities and product offerings within the semiconductor market.

Application

The FQB5N90TM is a high-voltage N-channel MOSFET, commonly used in applications such as power supplies, motor drives, and DC-DC converters. Its features make it suitable for switching applications in renewable energy systems, automotive electronics, and industrial controls. Additionally, it is utilized in consumer electronics for efficient power management.

Equivalent

Equivalent products to the FQB5N90TM MOSFET include the FQP5N90, IRF840, STP5NK90Z, and FQPF5N90. Always verify specifications like voltage, current ratings, and RDS(on) to ensure compatibility.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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