FQB50N06LTM

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FQB50N06LTM

MOSFET N-CH 60V 52.4A D2PAK

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Spécifications

Series QFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 52.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 21mOhm @ 26.2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1630 pF @ 25 V
Power Dissipation (Max) 3.75W (Ta), 121W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2PAK)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number FQB50N06

Vue d'ensemble

Description

The FQB50N06LTM is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. This N-channel MOSFET is rated for a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 50A, making it suitable for various power management tasks, including switching and amplification in power supply circuits.
Key features include low on-resistance (R_DS(on)), which minimizes power loss and heat generation, and fast switching capabilities, enhancing performance in high-frequency applications. The FQB50N06LTM is typically used in automotive, industrial, and consumer electronics applications, such as DC-DC converters, motor drives, and power inverters.
Its TO-220 package allows for efficient thermal dissipation, facilitating reliable operation in demanding environments. Overall, the FQB50N06LTM is a versatile component for designers looking to optimize power efficiency and performance in their electronic circuits.

Features

The FQB50N06LTM is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: Capable of conducting a continuous drain current (I_D) up to 50A, making it suitable for power management.
3. R_DS(on): It has a low on-resistance of around 0.025Ω, which reduces power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) typically ranges from 2V to 4V, enabling efficient switching.
5. Package Type: Available in a TO-220 package, which provides good thermal performance and ease of mounting.
6. Fast Switching: Designed for quick switching applications, reducing transition losses in circuits.
This MOSFET is commonly used in power supplies, motor drivers, and various other electronic applications where efficiency and reliability are critical.

Package

The FQB50N06LTM is typically packaged in a TO-220 format. This package type provides good thermal performance and is commonly used for high-power applications in power MOSFETs.

Pinout

The FQB50N06LTM is an N-channel MOSFET with a pin count of 3. The pins are typically configured as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the pin where the output current flows out of the MOSFET. It connects to the load in a circuit.
3. Source (S): This pin is connected to the ground or power supply return path. Current flows into this pin when the MOSFET is turned on.
The FQB50N06LTM is primarily used in power management applications and switching circuits, allowing for efficient control of high current loads. It has a maximum voltage rating of 60V and a maximum continuous drain current of 50A.

Manufacturer

The FQB50N06LTM is manufactured by ON Semiconductor, a global semiconductor company based in Phoenix, Arizona. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including power management, analog, logic, and discrete devices. The company serves various industries such as automotive, industrial, communications, and consumer electronics. Their products are used in applications that require efficient power management and signal processing, making ON Semiconductor a key player in the electronics market.

Application

The FQB50N06LTM is an N-channel MOSFET commonly used in power management applications, including DC-DC converters, power supplies, and motor control circuits. It is suitable for switching applications due to its low RDS(on) and fast switching capabilities. Additionally, it can be utilized in automotive applications, LED drivers, and battery management systems, where efficient power handling and thermal performance are critical.

Equivalent

The FQB50N06LTM is a N-channel MOSFET. Equivalent products include:
1. IRF3205
2. STP50NF06L
3. FQP50N06
4. BUK95150-55
5. AUIRFB3207
Ensure to check specifications like Vds, Id, Rds(on), and package type for compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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