FQB34N20LTM

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FQB34N20LTM

MOSFET N-CH 200V 31A D2PAK

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Spécifications

Series QFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 15.5A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 25 V
Power Dissipation (Max) 3.13W (Ta), 180W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2PAK)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number FQB34N20

Vue d'ensemble

Description

FQB34N20LTM is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency power applications. It features a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 34A, making it suitable for various high-voltage switching applications such as power supplies, converters, and motor drivers. The device boasts low on-state resistance (R_DS(on)), which enhances its efficiency and thermal performance, reducing power losses during operation.
Key specifications typically include a low gate threshold voltage, fast switching speeds, and robust thermal characteristics, allowing it to operate effectively in challenging environments. The FQB34N20LTM is often packaged in TO-220, making it easy to integrate into circuit designs and facilitating heat dissipation.
Overall, this MOSFET is valued for its reliability and performance in power management applications, offering designers a versatile solution for enhancing efficiency in electronic circuits.

Features

The FQB34N20LTM is an N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (VDS) of 200V.
2. Continuous Drain Current: Capable of carrying a continuous current of 34A, making it suitable for high-power applications.
3. RDS(on): It has a low on-resistance (RDS(on)) of approximately 0.034 ohms at VGS = 10V, which enhances efficiency and reduces heat generation.
4. Gate Threshold Voltage (VGS(th)): Typically ranges from 2V to 4V, allowing it to be driven with lower gate voltages.
5. Thermal Resistance: Features low thermal resistance to improve heat dissipation.
6. Package Type: Available in a TO-220 package, facilitating easy mounting and heat sinking.
7. Fast Switching Speed: Ideal for applications requiring rapid switching, such as power supplies and motor drivers.
These characteristics make the FQB34N20LTM suitable for a variety of applications in power electronics and automotive systems.

Package

The FQB34N20LTM is packaged in a TO-220 form factor. This package type is commonly used for power transistors, offering efficient thermal management and easy mounting options for heat sinks.

Pinout

The FQB34N20LTM is an N-channel MOSFET with a total of 8 pins. Its primary functions include switching and amplification in electronic circuits. Specifically, it is designed for use in power applications, providing efficient control of high voltages and currents.
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal where the current flows out of the MOSFET.
3. Source (S) - The terminal where the current flows into the MOSFET.
The remaining pins may be associated with additional functionalities or specific packaging requirements, such as thermal management and configuration in various circuit designs.
This device is typically used in applications like power supplies, motor drivers, and other high-efficiency switching applications. Always refer to the manufacturer's datasheet for detailed specifications and characteristics.

Manufacturer

The FQB34N20LTM is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and producing a wide range of semiconductor components, including power management, analog, logic, and discrete devices. The company serves various industries, including automotive, industrial, communications, computing, and consumer electronics. ON Semiconductor focuses on energy-efficient solutions and enables customers to achieve high-performance and reliable applications. The company is recognized for its commitment to innovation and sustainability in the semiconductor industry.

Application

The FQB34N20LTM is a high-performance power MOSFET primarily used in applications such as power supplies, DC-DC converters, motor drives, and electronic ballasts. It is suitable for use in renewable energy systems, electric vehicles, and industrial automation due to its efficiency and thermal performance. Its low on-resistance and fast switching capabilities make it ideal for high-frequency switching applications.

Equivalent

The FQB34N20LTM is an N-channel MOSFET. Equivalent products include the IRF3205, STP34NM50, and BUK954R-40. Always verify specifications such as voltage, current, RDS(on), and package type before substitution to ensure compatibility.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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