FQB33N10TM

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FQB33N10TM

MOSFET N-CH 100V 33A D2PAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series QFET®
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 33A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 52mOhm @ 16.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 51 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 1500 pF @ 25 V
PowerDissipation(Max) 3.75W (Ta), 127W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D²PAK (TO-263)

Vue d'ensemble

Description

FQB33N10TM is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It typically features a maximum drain-source voltage (V_DS) of 100V, a continuous drain current (I_D) rating of 33A, and a low on-resistance (R_DS(on)), which enhances its efficiency during operation. The device is widely used in power supplies, motor drives, and various switching applications due to its ability to handle significant power levels while minimizing heat generation. Its package type is usually TO-220, making it suitable for heat dissipation in a variety of configurations. The FQB33N10TM's performance characteristics make it an excellent choice for applications requiring reliable and efficient power management.

Features

The FQB33N10TM is an N-channel MOSFET designed for high-power applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 100V.
2. Current Rating: It supports continuous drain current (Id) up to 33A.
3. Low Rds(on): High efficiency with a low on-resistance (Rds(on)) of approximately 0.035Ω, which minimizes power losses.
4. Fast Switching: Designed for fast switching applications, enhancing performance in power conversion and switching circuits.
5. TO-220 Package: Housed in a TO-220 package that provides good thermal performance and ease of mounting.
6. Temperature Range: Operating temperature range typically from -55°C to +150°C, allowing for versatile applications in various environments.
7. Gate Threshold Voltage (Vgs(th)): Approximately 2-4V, making it suitable for low-voltage drive circuits.
Overall, the FQB33N10TM is ideal for power management applications, including motor control, power supplies, and other high-efficiency designs.

Package

The FQB33N10TM is packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation, making it suitable for power applications.

Pinout

The FQB33N10TM is an N-channel MOSFET with a pin count of 3. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.

2. Drain (D): This is the pin where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.

3. Source (S): This pin is connected to the ground or the negative side of the circuit. It serves as the return path for the current flowing through the drain.
The FQB33N10TM is commonly used in power applications due to its high voltage and current handling capabilities.

Manufacturer

The FQB33N10TM is a power MOSFET manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor was known for its innovation in the semiconductor industry, particularly in the field of power management solutions, analog, and mixed-signal devices. The company focused on producing components that are used in a variety of applications, including automotive, industrial, and consumer electronics. ON Semiconductor continues to provide a broad range of semiconductor solutions after acquiring Fairchild Semiconductor, emphasizing energy efficiency and performance in their products.

Application

The FQB33N10TM is a N-channel MOSFET typically used in applications such as power switching, DC-DC converters, motor controllers, and LED drivers. Its high voltage and current rating make it suitable for power management in industrial equipment, consumer electronics, and automotive systems, including electric vehicles and battery management systems.

Equivalent

The FQB33N10TM is an N-channel MOSFET. Equivalent products include the IRF330, IRF320, STP33NF10, and BSS123. Always verify specifications such as voltage rating, current rating, and package type to ensure compatibility.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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