FQB22P10TM

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FQB22P10TM

MOSFET P-CH 100V 22A D2PAK

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Spécifications

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
Series QFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 22A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 125mOhm @ 11A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 50 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1500 pF @ 25 V
PowerDissipation(Max) 3.75W (Ta), 125W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D²PAK (TO-263)

Vue d'ensemble

Description

FQB22P10TM is a model designation that typically refers to a specific product or component, often in fields like technology, electronics, or manufacturing. The designation can denote characteristics such as size, type, features, or compatibility within a product line.
To provide a detailed introduction, we would need further context about the specific industry or application it pertains to. In general, models like FQB22P10TM are used to streamline identification and ensure clarity in specifications, helping users to find the right components for their requirements. If this model is related to a specific device or technology, please provide additional details for a more tailored overview.

Features

The FQB22P10TM is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (VDS) of 40V, suitable for many low to medium voltage applications.
2. Current Rating: The device can handle continuous drain current (ID) up to 22A, enabling it to drive high loads effectively.
3. Low RDS(on): It features a low on-resistance (RDS(on)) which minimizes conduction losses, improving overall efficiency.
4. Fast Switching: Optimized for fast switching speeds, making it ideal for applications like power supplies, DC-DC converters, and motor drivers.
5. Thermal Performance: Designed for good thermal conductivity, it has a high maximum junction temperature, enhancing reliability in demanding conditions.
6. Package Type: It typically comes in a TO-220 or similar package, facilitating easy heat dissipation and mounting.
Overall, the FQB22P10TM is suited for power management applications requiring efficiency and reliability.

Package

The FQB22P10TM is typically packaged in a TO-220 form factor. This package type is commonly used for power transistors, offering good thermal performance and ease of heatsinking.

Pinout

The FQB22P10TM is an N-channel MOSFET with a total of 8 pins. Its primary functions include switching and amplification in various electronic circuits. The pin configuration is as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which the current exits the MOSFET.
3. Source (S) - The terminal through which the current enters the MOSFET.
4. Body Diode (D/S) - Provides a path for current in the reverse direction, inherent to the MOSFET structure.
The FQB22P10TM is designed for high-speed switching applications and can handle significant voltage and current, making it suitable for power management and control in power electronics. Its low on-resistance and fast switching capabilities contribute to its efficiency in various applications, including power supplies and motor drives.

Manufacturer

The FQB22P10TM is a power MOSFET manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor is a semiconductor company that specializes in providing a wide range of electronic components, including power management devices, analog, and RF products. They are known for their innovations in semiconductor technologies and cater to various sectors such as automotive, industrial, and consumer electronics. ON Semiconductor, which acquired Fairchild in 2016, focuses on energy-efficient solutions and continues to develop advanced semiconductor technologies for modern applications.

Application

FQB22P10TM is a power MOSFET primarily used in applications such as DC-DC converters, power management systems, motor drives, and high-efficiency switching power supplies. It is suitable for industrial automation, renewable energy systems, and electric vehicles due to its high efficiency and fast switching capabilities.

Equivalent

The FQB22P10TM is a N-channel MOSFET. Equivalent products include the IRF3205, STP22NM50, and FQP30N06L. These alternatives may vary slightly in specifications, so it is important to verify parameters like voltage, current rating, and RDS(on) before substitution. Always check the datasheets for compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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