FQB12P20TM

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FQB12P20TM

MOSFET P-CH 200V 11.5A D2PAK

  • Fabricant
  • Mfr. Partie #FQB12P20TM
  • Paquet D2PAK-3
  • Fiche de données
  • En stock7027

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series QFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 11.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 470mOhm @ 5.75A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 40 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1200 pF @ 25 V
PowerDissipation(Max) 3.13W (Ta), 120W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D²PAK (TO-263)

Vue d'ensemble

Description

FQB12P20TM is a type of advanced power module typically used in various electronic applications, including renewable energy systems, industrial automation, and electric vehicles. It integrates multiple functions, such as power switching and control, into a compact design, enhancing efficiency and reducing system complexity.
This module is characterized by its high efficiency, thermal performance, and reliability, making it suitable for demanding environments. It often features built-in protections against overcurrent, overheating, and voltage spikes, contributing to the longevity of the system.
FQB12P20TM may be designed for specific voltages and currents, catering to various industrial standards. It is essential for users to consult the technical datasheet for detailed specifications, including electrical characteristics, thermal management requirements, and application guidelines to ensure optimal performance in their specific use cases.

Features

The FQB12P20TM is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
2. Continuous Drain Current: The device supports a continuous drain current (I_D) of up to 12A, depending on the specific thermal conditions.
3. Low R_DS(on): The on-resistance is low, typically around 0.12 Ohms, which minimizes power loss during operation.
4. Fast Switching Speed: The FQB12P20TM offers quick switching capabilities, enhancing efficiency in fast-switching applications.
5. Thermal Management: It features a TO-220 package, allowing for effective heat dissipation.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2-4V, ensuring compatibility with various driving circuits.
These features make the FQB12P20TM suitable for use in DC-DC converters, motor drives, and other power electronics applications.

Package

The FQB12P20TM is packaged in a TO-220 style package, which is a popular type for power transistors, providing efficient heat dissipation and easy mounting on heat sinks.

Pinout

The FQB12P20TM is a power MOSFET transistor typically used in various switching and amplification applications. It features a TO-220 package, which generally has three pins.
1. Gate (G): This pin controls the MOSFET, allowing it to turn on or off based on the voltage applied.
2. Drain (D): This is the output pin where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin connects to the ground or the negative side of the power supply.
The FQB12P20TM is designed for high efficiency and can handle significant current and voltage levels, making it suitable for applications such as power management and motor control. Always refer to the specific datasheet for detailed electrical characteristics and ratings.

Manufacturer

The FQB12P20TM is a power MOSFET manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor was known for its development of semiconductor solutions, particularly in the power management and analog sectors. It focused on producing a range of products, including transistors, diodes, and integrated circuits, serving various applications in automotive, industrial, consumer electronics, and telecommunications. The acquisition by ON Semiconductor expanded its capabilities and product offerings in the semiconductor market, enhancing its presence in power and energy-efficient technologies.

Application

The FQB12P20TM is a power MOSFET commonly used in applications such as switching power supplies, motor control, and power management circuits. Its features make it suitable for high-efficiency designs in renewable energy systems, LED drivers, and DC-DC converters. Additionally, it can be utilized in consumer electronics and automotive applications for efficient power handling and thermal management.

Equivalent

The FQB12P20TM is a N-channel MOSFET. Equivalent products include the IRF120, STP12NK60Z, and MTP50N06E. Ensure to check specifications such as voltage, current rating, and package type to confirm compatibility for your specific application.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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