FQA9N90C

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FQA9N90C

MOSFET N-CH 900V 9A TO3P

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  • Mfr. Partie #FQA9N90C
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Spécifications

Series QFET®
Part Status Obsolete
Base Product Number FQA9
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2730 pF @ 25 V
Power Dissipation (Max) 280W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package TO-3P-3, SC-65-3
Packaging Tube

Vue d'ensemble

Description

FQA9N90C is a high-performance N-channel MOSFET designed for power management applications. It features low on-resistance and fast switching speeds, making it suitable for use in various electronic devices, including power supplies, motor drivers, and DC-DC converters. The device typically comes in a compact package that facilitates easy integration into circuit designs.
Key specifications include a maximum drain-source voltage (Vds) and a high continuous drain current (Id), allowing it to handle significant power loads efficiently. Its thermal performance is optimized for reliable operation in demanding conditions. FQA9N90C is often utilized in applications requiring efficient power conversion and management, contributing to energy savings and improved system performance.
When designing circuits with FQA9N90C, proper thermal management and circuit protection techniques should be considered to maximize performance and reliability.

Features

The FQA9N90C is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 900V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 9A, providing flexibility in various designs.
3. Low On-Resistance: Exhibits a low on-resistance (R_DS(on)) typically around 0.5Ω, which minimizes power loss during operation.
4. Fast Switching Speed: Designed for efficient switching, enhancing performance in PWM applications.
5. Thermal Resistance: Features low thermal resistance, allowing for better heat dissipation and improved reliability.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 2V and 4V, enabling easy drive requirements.
7. Package: Available in TO-220 and other packages for versatile design integration.
These features make the FQA9N90C ideal for use in power supplies, motor drivers, and other high-voltage applications.

Package

The FQA9N90C is typically packaged in a TO-220 form factor. This package type is designed for power transistors, providing good thermal performance and ease of mounting to heatsinks.

Pinout

The FQA9N90C is an N-channel MOSFET with a total of 3 pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.

2. Drain (D): This pin connects to the load. The current flows out from this pin when the MOSFET is turned on.

3. Source (S): This pin is connected to ground or a lower potential in a typical circuit. The current enters the MOSFET through this pin when it is turned on.
The FQA9N90C is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 900V and a continuous drain current rating (I_D) of 9A. This makes it suitable for various applications, including power supplies and motor drives.

Manufacturer

The FQA9N90C is manufactured by Fairchild Semiconductor, which is a subsidiary of ON Semiconductor. Fairchild Semiconductor specializes in the design and production of a wide range of semiconductor products, including power transistors, analog devices, and integrated circuits. Founded in 1957, the company has been influential in the development of various semiconductor technologies and plays a significant role in sectors such as automotive, industrial, and consumer electronics. ON Semiconductor, which acquired Fairchild in 2016, continues to offer innovative solutions based on Fairchild's legacy products, including high-efficiency power management and energy-saving technologies.

Application

The FQA9N90C is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its key areas include switch-mode power supplies, DC-DC converters, motor control, and high-efficiency power management systems. It is suitable for applications requiring high-speed switching and low on-resistance, making it ideal for automotive, industrial, and consumer electronics circuits.

Equivalent

The FQA9N90C is a N-channel MOSFET. Equivalent products include:
1. IRF840
2. STP9NK90Z
3. MRF490
4. FQP9N90
5. BUK9YB90-55
Always check datasheets for specific characteristics and compatibility in your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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