FQA70N15

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FQA70N15

POWER FIELD-EFFECT TRANSISTOR, 7

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Spécifications

Package Bulk
Series QFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V
Current-ContinuousDrain(Id)@25°C 70A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 28mOhm @ 35A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 175 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 5400 pF @ 25 V
PowerDissipation(Max) 330W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-3PN

Vue d'ensemble

Description

FQA70N15 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a maximum drain-source voltage (Vds) of 150V and a continuous drain current (Id) rating of 70A, making it suitable for high-power applications. The device is characterized by low on-resistance (Rds(on)), which minimizes power loss during operation, enhancing its efficiency in circuits such as DC-DC converters, power supplies, and motor controllers.
Typically packaged in a TO-220 or similar housing, the FQA70N15 allows for efficient thermal management, crucial for high-current applications. Its gate threshold voltage (Vgs(th)) is relatively low, enabling easier drive requirements for switching. Overall, the FQA70N15 is popular among engineers for its reliability and performance in power electronics. Always refer to the manufacturer's datasheet for specific characteristics and application guidance.

Features

The FQA70N15 is an N-channel MOSFET designed for high-performance switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 150V, making it suitable for various high-voltage applications.
2. Current Rating: The device can handle continuous drain current (Id) up to 70A, providing robust performance in power circuits.
3. Low On-Resistance: With a typical Rds(on) of around 0.04 ohms, it ensures efficient operation with minimal power loss.
4. Fast Switching Speed: The FQA70N15 is capable of rapid switching, ideal for applications in power supplies and converters.
5. Thermal Performance: It features a TO-220 package, which allows for effective heat dissipation, enhancing reliability and longevity.
6. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is low, facilitating easy drive in low-voltage circuits.
These characteristics make the FQA70N15 suitable for applications such as motor drives, power inverters, and other high-current switching tasks.

Package

The FQA70N15 is typically packaged in a TO-220 form factor, which is a metal can package with three leads. This package type is designed for efficient heat dissipation and is commonly used in power applications.

Pinout

The FQA70N15 is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and the source.
2. Drain (D): The drain pin is where the current flows out of the MOSFET. It connects to the load.
3. Source (S): The source pin is where the current enters the MOSFET. It typically connects to ground or the lower potential in the circuit.
The FQA70N15 is rated for a maximum drain-source voltage (V_DS) of 150V and a maximum continuous drain current (I_D) of 70A, making it suitable for high-power applications in switching and amplification.

Manufacturer

The FQA70N15 is manufactured by Fairchild Semiconductor, which is known for its expertise in power management and semiconductor technology. Fairchild Semiconductor, now part of ON Semiconductor, specializes in designing and manufacturing a wide range of electronic components, including power MOSFETs, diodes, and analog integrated circuits. The company focuses on providing solutions for various applications, such as automotive, consumer electronics, and industrial markets, emphasizing innovation and efficiency in energy management.

Application

The FQA70N15 is a power MOSFET primarily used in applications such as DC-DC converters, power supplies, motor drivers, and inverters. Its high efficiency and fast switching capabilities make it suitable for switching power applications, including renewable energy systems and electric vehicles. Additionally, it can be used in audio amplification and high-frequency switching circuits.

Equivalent

The FQA70N15 is a N-channel MOSFET with a 70A current rating and a 150V breakdown voltage. Equivalent products include:
1. IRF320 (International Rectifier)
2. STP70NF15 (STMicroelectronics)
3. BUK7Y15-60 (NXP Semiconductors)
4. MTP70N15 (ON Semiconductor)
Always verify specifications like Rds(on), Vgs, and thermal performance to ensure compatibility.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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