FQA32N20C

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FQA32N20C

MOSFET N-CH 200V 32A TO3PN

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Spécifications

Supplier onsemi
Package Tube
Series QFET®
ProductStatus Last Time Buy
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 32A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 82mOhm @ 16A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 110 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 2220 pF @ 25 V
PowerDissipation(Max) 204W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-3PN

Vue d'ensemble

Description

The FQA32N20C is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 32A, making it suitable for power management in various electronic devices.
Key specifications include a low on-resistance (R_DS(on)), which minimizes power loss during operation. The FQA32N20C is primarily used in applications such as power supplies, motor control, and DC-DC converters, where efficient switching is crucial.
Its package type is typically TO-220, allowing for effective heat dissipation. The device is designed to handle high-speed switching, ensuring quick response times and improved performance in demanding environments. Overall, the FQA32N20C is a reliable choice for designers looking to enhance the efficiency and reliability of their power electronics systems.

Features

The FQA32N20C is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (VDS) of 200V, making it suitable for high-voltage applications.
2. Current Capacity: It has a continuous drain current (ID) rating of up to 32A, which allows it to handle significant loads.
3. RDS(on): The on-resistance (RDS(on)) is low, typically around 0.1 ohms, which helps reduce power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) is between 2V to 4V, enabling efficient switching.
5. Package Type: It is commonly available in TO-220 package, which aids in effective heat dissipation.
6. Fast Switching: Designed for high-speed switching applications, making it ideal for power management circuits.
These features make the FQA32N20C an excellent choice for applications in automotive, power supplies, and other demanding environments.

Package

The FQA32N20C is typically packaged in a TO-220 form factor. This package type is designed for high power applications, allowing for efficient heat dissipation and easy mounting on heatsinks.

Pinout

The FQA32N20C is an N-channel MOSFET with a pin count of 4. Its pin configuration is as follows:
1. Gate (G) - Controls the MOSFET, allowing it to switch on or off.
2. Drain (D) - The output terminal where the load is connected and current flows out.
3. Source (S) - The terminal through which current enters the MOSFET.
This MOSFET is designed for applications that require efficient switching and high-speed performance, with a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 32A. It is commonly used in power management and conversion circuits.

Manufacturer

The FQA32N20C is manufactured by Fairchild Semiconductor, a company known for its production of high-performance analog and mixed-signal semiconductors. Fairchild Semiconductor specializes in power management, signal conditioning, and a variety of other semiconductor products that cater to a wide range of applications, including automotive, industrial, and consumer electronics. The FQA32N20C is specifically a N-channel MOSFET designed for use in power switching applications, highlighting Fairchild's focus on delivering solutions for efficient power management. Fairchild Semiconductor was acquired by ON Semiconductor in 2016, further expanding their capabilities and product offerings in the semiconductor industry.

Application

The FQA32N20C is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor drivers, and switch-mode power supplies. Its high efficiency and fast switching capabilities make it suitable for automotive, industrial, and consumer electronics applications, particularly in areas requiring effective thermal management and high-frequency operations.

Equivalent

The FQA32N20C is an N-channel MOSFET. Equivalent products include:
1. IRF3205
2. FQP30N20L
3. STP32NF20
4. MTP32N20
5. APT32M20
Always verify specifications such as V_DS, I_D, R_DS(on), and package type before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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