FP75R12KT3

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FP75R12KT3

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Spécifications

Mounting Style Screw Mount
Package / Case Econo 3
Technology Si
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 125 C
Packaging Tray
Brand Infineon Technologies
Product Type IGBT Modules
Subcategory IGBTs
REACH - SVHC Details
Configuration 3-Phase Inverter
Series Trenchstop IGBT3 - T3
Height 17 mm
Length 122 mm
Product IGBT Silicon Modules
Factory Pack Quantity:Factory Pack Quantity 10
Width 62 mm
Part # Aliases SP000100443 FP75R12KT3BOSA1
Unit Weight 10.582189 oz
Collector- Emitter Voltage VCEO Max 1.2 kV
Continuous Collector Current at 25 C 105 A
Maximum Gate Emitter Voltage 20 V
Tradename TRENCHSTOP EconoPIM
Collector-Emitter Saturation Voltage 1.7 V
Gate-Emitter Leakage Current 400 nA
Pd - Power Dissipation 355 W

Vue d'ensemble

Description

The FP75R12KT3 is a type of insulated gate bipolar transistor (IGBT) designed for use in power electronics applications. It features a maximum collector-emitter voltage (VCE) of 1200 volts and a continuous collector current (IC) rating of 75 amperes. This device is commonly utilized in applications such as motor drives, inverters, and power supplies due to its high efficiency and fast switching capabilities.
The FP75R12KT3 is characterized by low conduction losses and minimal switching losses, making it suitable for high-frequency applications. It typically includes a built-in freewheeling diode, which provides additional benefits for applications involving inductive loads.
With a compact package design, it facilitates easy integration into various electronic circuits. Overall, the FP75R12KT3 is a reliable choice for engineers looking to enhance the performance of power conversion systems.

Features

The FP75R12KT3 is an IGBT (Insulated Gate Bipolar Transistor) module designed for high-performance applications. Key features include:
1. Voltage Rating: 1200 V, suitable for various power conversion applications.
2. Current Rating: 75 A, allowing for substantial current handling.
3. Low Switching Losses: Optimized for efficient operation, which is crucial in applications like inverter circuits and motor drives.
4. Thermal Performance: Designed for excellent thermal conductivity, enhancing reliability and longevity.
5. Compact Design: Minimizes space requirements in circuit designs.
6. Integrated Anti-parallel Diodes: Provides enhanced performance in switching applications by allowing bidirectional current flow.
7. High Reliability: Built for robustness in demanding environments, suitable for industrial and renewable energy applications.
These features make the FP75R12KT3 ideal for use in various sectors, including renewable energy, industrial automation, and electric vehicles.

Package

The FP75R12KT3 is typically packaged in a DPAK (TO-252) format, which is designed for surface mounting. This package provides efficient thermal performance and compact size, suitable for power applications.

Pinout

The FP75R12KT3 is a type of IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Technologies. It features a total of 6 pins. The pin configuration typically includes:
1. Collector (C) - Main terminal for collecting charge carriers.
2. Emitter (E) - Terminal for emitting charge carriers.
3. Gate (G) - Control terminal for turning the device on and off.
The module is designed for power applications, such as inverters and converters, handling high voltage (up to 1200V) and current (up to 75A). Its structure allows for efficient switching and thermal management. The FP75R12KT3 is often used in industrial drives, renewable energy systems, and power supplies. Always refer to the specific datasheet for detailed pin assignments and electrical characteristics.

Manufacturer

The FP75R12KT3 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in a wide range of semiconductor solutions, focusing on sectors such as automotive, industrial power control, and security. The company is known for its innovations in power semiconductors, microcontrollers, and sensors, serving various applications including energy efficiency, mobility, and security. Infineon is recognized as a leader in the semiconductor industry, particularly for its products that enhance energy efficiency and enable advances in electric vehicles and renewable energy technologies.

Application

The FP75R12KT3 is an IGBT (Insulated Gate Bipolar Transistor) used in various applications, including motor drives, power inverters, renewable energy systems, and industrial automation. It is suitable for high-power switching applications, such as induction heating, UPS systems, and welding equipment. Its high efficiency and fast switching capabilities make it ideal for energy conversion and control in electronic circuits.

Equivalent

The FP75R12KT3 is a IGBT module from Infineon. Equivalent products include the Mitsubishi CM75DU-12F, Semikron SKM75GB123D, and the ON Semiconductor FGA75N12. For specific applications or requirements, it's essential to check datasheets for compatibility in terms of ratings and performance.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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