FP30R06W1E3

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FP30R06W1E3

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  • Mfr. Partie #FP30R06W1E3
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  • En stock3031

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Vue d'ensemble

Description

FP30R06W1E3 is a type of power MOSFET, specifically designed for high-efficiency applications in power management and switching circuits. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) rating of 6A, making it suitable for both low and medium voltage applications. This component is known for its low on-resistance (Rds(on)), which minimizes power loss and enhances thermal performance.
The package type typically used for FP30R06W1E3 is a TO-220 or similar, facilitating effective heat dissipation. Its fast switching capabilities make it ideal for use in applications like DC-DC converters, power supplies, and motor drivers. Additionally, it is compatible with standard gate drive voltages, ensuring ease of integration into various electronic designs.
Overall, FP30R06W1E3 is favored in modern electronic circuits for its reliability, efficiency, and versatility in handling power management tasks.

Features

The FP30R06W1E3 is an IGBT (Insulated Gate Bipolar Transistor) designed for high-performance applications. Key features include:
1. Voltage Rating: It typically supports a maximum collector-emitter voltage (V_CE) of 600V.
2. Current Rating: The device can handle a continuous collector current (I_C) of up to 30A.
3. Switching Speed: Offers fast switching capabilities, making it suitable for high-frequency applications.
4. Low On-State Voltage: Provides efficient operation with a low on-state voltage drop, which reduces power losses.
5. Thermal Performance: Designed for low thermal resistance, improving reliability under high thermal stress.
6. Package Type: Usually available in a TO-247 or similar package for easy mounting and heat dissipation.
7. Applications: Commonly used in motor drives, inverters, and power supplies.
These features make the FP30R06W1E3 a versatile choice for various power electronic applications.

Package

The FP30R06W1E3 is typically packaged in a TO-220 form factor. This packaging allows for efficient heat dissipation and is commonly used for power semiconductor devices.

Pinout

The FP30R06W1E3 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Technologies. It features a total of 30 pins. The main functions of this module include serving as a high-efficiency switch for power applications, primarily in motor drives, inverters, and other power conversion systems.
The pin configuration typically includes connections for the gate (G), collector (C), and emitter (E) terminals, allowing for easy integration into various circuit designs. Each pair of pins corresponds to different phases or functions, enabling the module to manage high voltage and current levels efficiently while ensuring reliable operation in demanding environments.
For detailed pin assignments and specific functions, it's advisable to consult the manufacturer's datasheet, as the precise layout and configuration can vary between different modules.

Manufacturer

The FP30R06W1E3 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in the production of a wide range of semiconductor solutions. The company focuses on various sectors, including automotive, industrial power control, chip card and security, and IoT applications. Infineon's products are used in numerous applications, such as energy efficiency, mobility, and security. The FP30R06W1E3 is a part of their IGBT (Insulated Gate Bipolar Transistor) product line, designed for high-performance power electronic applications, commonly used in renewable energy systems, industrial drives, and motor control applications.

Application

The FP30R06W1E3 is an IGBT (Insulated Gate Bipolar Transistor) used primarily in power electronics applications, including motor drives, industrial inverters, renewable energy systems (like solar inverters), and rail traction systems. Its high efficiency and fast switching capabilities make it suitable for applications requiring high power and reliability in conversion and control of electrical energy.

Equivalent

The FP30R06W1E3 is an IGBT (Insulated Gate Bipolar Transistor) used in power applications. Equivalent products include the Infineon FZ30R06KE3, Mitsubishi CM300DY-24NF, and the ON Semiconductor MBRF30100. However, always check the datasheets for specific parameters like voltage, current ratings, and switching characteristics to ensure compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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