FP25R12W2T4

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FP25R12W2T4

  • Fabricant
  • Mfr. Partie #FP25R12W2T4
  • Paquet
  • Fiche de données
  • En stock6446

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Spécifications

Package / Case EASY2B
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Brand Infineon Technologies
Product Type IGBT Modules
Subcategory IGBTs
Series Trenchstop IGBT4 - T4
Mounting Style Screw Mount
Factory Pack Quantity:Factory Pack Quantity 15
Technology Si
Product IGBT Silicon Modules
Configuration 3-Phase Inverter
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 1.85 V
Continuous Collector Current at 25 C 39 A
Gate-Emitter Leakage Current 400 nA
Pd - Power Dissipation 175 W
Maximum Gate Emitter Voltage 20 V
Part # Aliases SP000307561 FP25R12W2T4BOMA1
Packaging Tray
Tradename EasyPIM
Unit Weight 1.375685 oz
Height 12 mm
Length 56.7 mm
Width 62.8 mm

Vue d'ensemble

Description

FP25R12W2T4 is a designation for a specific type of power semiconductor device, commonly a field-effect transistor (FET) or an insulated gate bipolar transistor (IGBT). These devices are used in various applications, including power conversion, motor control, and switching circuits.
The "FP" prefix often indicates a series or family of components produced by a manufacturer, while the following alphanumeric characters provide details on specifications such as voltage rating, current rating, and package type.
In particular, "25" typically refers to the current rating in amperes, "12" may indicate the voltage rating in hundreds of volts, and "W2T4" often signifies the specific package type and thermal characteristics.
Understanding these specifications is essential for engineers to select the appropriate device for their applications, ensuring reliability and efficiency in electronic designs. Always refer to the manufacturer's datasheet for detailed specifications and operational guidelines.

Features

The FP25R12W2T4 is an IGBT (Insulated Gate Bipolar Transistor) module, commonly used in power electronics for applications such as inverters, converters, and motor drives. Key features include:
1. Voltage Rating: Typically rated at 1200V, suitable for high-voltage applications.
2. Current Rating: Capable of handling up to 25A, making it effective for medium power applications.
3. Package Type: Comes in a compact module format, which facilitates easy installation and thermal management.
4. Low Switching Losses: Designed for high efficiency, minimizing energy losses during operation.
5. Thermal Performance: Equipped with a robust thermal design to manage heat dissipation effectively.
6. Integrated Diode: Features an anti-parallel diode for freewheeling purposes, enhancing circuit performance.
7. High Reliability: Built to operate under demanding conditions, ensuring longevity and consistent performance.
These features make the FP25R12W2T4 suitable for various industrial applications including renewable energy systems and industrial motor control.

Package

The FP25R12W2T4 is typically packaged in a TO-247 format, which is a power semiconductor package designed for high-voltage applications. This package type offers efficient thermal performance and is commonly used for IGBTs and MOSFETs in industrial and automotive applications.

Pinout

The FP25R12W2T4 is a power module from Infineon Technologies, specifically a IGBT (Insulated Gate Bipolar Transistor) module. It typically features a total of 25 pins. The module is designed for high-performance applications in power electronics, such as inverters and converters.
The pins serve various functions, including gate control, collector, and emitter connections for the IGBT and diode components. These connections facilitate the control and operation of the module in switching applications, providing efficient power management. The specific pin layout and function can be referenced in the manufacturer's datasheet for detailed specifications and electrical characteristics.

Manufacturer

The FP25R12W2T4 is manufactured by Fujitsu Limited, a multinational corporation based in Japan. Fujitsu is primarily known for its information technology services and products, including computing products, software, and telecommunications equipment. The company operates in various sectors, including enterprise computing, cloud services, and IT consulting. Fujitsu is recognized for its innovations in technology and plays a significant role in the global IT industry, serving a wide range of clients from different sectors such as government, healthcare, and finance.

Application

The FP25R12W2T4 is an IGBT (Insulated Gate Bipolar Transistor) used in various applications, including industrial drives, renewable energy systems (like solar inverters), motor control, and power supplies. Its high efficiency and fast switching capabilities make it suitable for applications requiring high power handling and improved thermal performance.

Equivalent

The FP25R12W2T4 chip is a part of the Infineon IGBT family. Equivalent products include the FGA25N120, FZ1200R12KF4, and the IXGN60N60C3. For exact replacements, always check specific electrical characteristics and application compatibility to ensure proper functionality.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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