FMH23N50E

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FMH23N50E

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Spécifications

Manufacturer Fuji Electric
Operating Temperature -55℃~+150℃
Current - Continuous Drain(Id) 23A
Pd - Power Dissipation 315W
Drain to Source Voltage 500V
RDS(on) 0.245Ω@10V,11.5A
Gate Threshold Voltage (Vgs(th)@Id) 3.5V
Type 1 N-channel
Gate Charge(Qg) 139.5nC@10V
Input Capacitance(Ciss@Vds) 5.25nF@25V

Vue d'ensemble

Description

The FMH23N50E is a high-voltage N-channel MOSFET designed for various power electronics applications. With a maximum drain-source voltage of 500V and continuous drain current capability of up to 23A, it is well-suited for use in switch mode power supplies, motor drivers, and other high-voltage circuits. The device features low on-resistance, which minimizes power loss during operation, enhancing overall efficiency. Its fast switching speed makes it ideal for applications requiring rapid response times. The FMH23N50E is typically housed in a TO-220 package, allowing for adequate heat dissipation and easy mounting. Key parameters include a gate threshold voltage (Vgs) that ensures reliable operation across a range of voltages. This MOSFET is commonly used in industrial applications, renewable energy systems, and consumer electronics. Proper thermal management and circuit design are crucial to maximizing performance and longevity in practical applications.

Features

The FMH23N50E is a N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage circuits.
2. Current Rating: The maximum continuous drain current (I_D) is 23A at a specified case temperature, supporting substantial load requirements.
3. R_DS(on): The on-resistance is low, typically around 0.5 ohms, ensuring efficient operation and reduced power loss.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is in the range of 2-4V, allowing for easy drive with standard logic levels.
5. Package Type: It comes in a TO-220 package, providing good thermal performance and ease of mounting on heatsinks.
6. Applications: Ideal for use in power supplies, motor drives, and other high-efficiency switching applications.
This combination of features makes the FMH23N50E a versatile choice for designers needing reliable performance in high-voltage environments.

Package

The FMH23N50E is typically provided in a TO-247 package type. This package is designed for high-power applications, offering good thermal performance and ease of handling.

Pinout

The FMH23N50E is an N-channel MOSFET designed for high-voltage applications. It typically comes in a TO-220 package with 3 pins.
Pin Configuration:
1. Gate (G): The control terminal that turns the MOSFET on or off by applying a voltage.
2. Drain (D): The terminal through which the current flows out when the MOSFET is on.
3. Source (S): The terminal where the current enters the MOSFET.
Key Specifications:
- Maximum drain-source voltage (V_DS): 500V
- Continuous drain current (I_D): 23A
- R_DS(on): Low on-resistance for efficient switching
The FMH23N50E is used in applications such as power supplies, motor drives, and inverters where efficient control of high voltage and current is required.

Manufacturer

The FMH23N50E is manufactured by Fairchild Semiconductor, which is a well-known company in the semiconductor industry. Fairchild specializes in a wide range of semiconductor products, including power management solutions, analog devices, and discrete components. Established in 1957, Fairchild has a long history of innovation and has played a significant role in the development of the semiconductor industry. The FMH23N50E is a N-channel MOSFET, primarily used in power electronics applications for efficient switching. In 2016, Fairchild was acquired by ON Semiconductor, expanding ON's portfolio in power management and analog technologies.

Application

The FMH23N50E is a high-voltage, N-channel MOSFET used in various applications, including power supplies, motor drives, and switching regulators. Its ability to handle high voltage and current makes it suitable for industrial automation, renewable energy systems, and consumer electronics. Additionally, it is often used in inverter circuits and lighting control systems.

Equivalent

The FMH23N50E is a 500V N-channel MOSFET commonly used in power switching applications. Equivalent products include:
1. STP23NM50 (STMicroelectronics)
2. IRF230 (Infineon)
3. MTP23N50E (ON Semiconductor)
4. 2SK3707 (Toshiba)
Ensure to verify specifications such as V_DS, I_D, R_DS(on), and package type for compatibility in your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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