FM25640B-GTR

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FM25640B-GTR

IC FRAM 64KBIT SPI 20MHZ 8SOIC

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series F-RAM™
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat FRAM
Technology FRAM (Ferroelectric RAM)
MemorySize 64Kb (8K x 8)
MemoryInterface SPI
ClockFrequency 20 MHz
Voltage-Supply 4.5V ~ 5.5V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Vue d'ensemble

Description

The FM25640B-GTR is a non-volatile memory device manufactured by Fairchild Semiconductor (now part of ON Semiconductor). It is part of the FM series of ferroelectric random access memories (FeRAM), which combines the advantages of traditional RAM and EEPROM. This device features a storage capacity of 64 Kbits and is designed for applications requiring fast write speeds, low power consumption, and high endurance.
Key attributes include a voltage range of 2.7V to 3.6V, I²C communication interface, and the ability to perform write operations in less than 10 microseconds, making it suitable for applications in automotive, industrial, and consumer electronics. The FM25640B-GTR is also highly reliable, with an endurance of over 10 trillion read/write cycles and data retention of over 10 years. Its unique ferroelectric technology allows for data storage without the need for a traditional battery backup. Overall, the FM25640B-GTR is ideal for applications requiring fast, non-volatile storage with high durability.

Features

The FM25640B-GTR is a non-volatile memory device featuring a 64 Kbit (8 K x 8) EEPROM architecture. Key features include:
1. Communication Interface: It utilizes a standard I²C interface, allowing easy integration with microcontrollers.
2. High Speed: Supports fast mode with speeds up to 1 MHz.
3. Low Power Consumption: Designed for low power operation, suitable for battery-powered applications.
4. Endurance: Offers high endurance with up to 1 million write cycles.
5. Data Retention: Provides reliable data retention of up to 100 years.
6. Wide Operating Voltage: Operates within a voltage range of 1.8V to 5.5V, accommodating various system requirements.
7. Byte Write and Page Write: Supports both byte-level and page-level write operations for flexibility.
8. Packages: Available in various package options to fit different design constraints.
These features make the FM25640B-GTR ideal for applications in consumer electronics, industrial equipment, and automotive systems requiring reliable data storage.

Package

The FM25640B-GTR is offered in an 8-pin SOIC (Small Outline Integrated Circuit) package type, which is a surface-mount package commonly used for memory devices.

Pinout

The FM25640B-GTR is a 64K-bit (8K x 8) ferroelectric random-access memory (FRAM) device. It features a total of 8 pins. The pin functions are as follows:
1. VDD: Power supply.
2. VSS: Ground.
3. SCL: Serial clock input for SPI communication.
4. SDA: Serial data input/output for SPI communication.
5. HOLD: Hold pin to pause communication.
6. WP: Write protect pin, enabling or disabling write operations.
7. A0, A1: Address selection pins for multiple devices on the same bus.
The device provides high-speed read/write capabilities, low power consumption, and high endurance, making it suitable for various applications such as data logging and smart meters.

Manufacturer

The FM25640B-GTR is manufactured by Fujitsu Semiconductor America, Inc., a subsidiary of Fujitsu Limited. Fujitsu is a multinational information technology equipment and services company based in Japan. The company specializes in a wide range of semiconductor products, including non-volatile memory solutions like the FM25640B-GTR, which is a 64Kb Ferroelectric RAM (FeRAM) device.
Fujitsu Semiconductor focuses on providing high-performance and low-power memory solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its innovation in semiconductor technology and plays a significant role in the global semiconductor industry.

Application

The FM25640B-GTR is a non-volatile memory device used in various applications such as industrial automation, automotive systems, consumer electronics, and telecommunications. It is suitable for data logging, configuration storage, and firmware updates due to its fast access times and endurance. Additionally, it is used in systems requiring reliable data retention even in power-loss situations.

Equivalent

The FM25640B-GTR chip is a ferroelectric RAM (FRAM) device. Equivalent products include the MB85RS64V from Fujitsu, the CY15B104Q from Cypress, and the M45PE20 from STMicroelectronics. Ensure to verify specifications such as voltage, capacity, and interface compatibility when considering alternatives.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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