FGW75N60HD

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FGW75N60HD

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Spécifications

Manufacturer Fuji Electric

Vue d'ensemble

Description

The FGW75N60HD is a high-voltage N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of up to 75A, making it suitable for high-efficiency switching applications, such as in power supplies, inverters, and motor drives. The device is known for its low on-resistance (Rds(on)), which minimizes conduction losses and enhances thermal performance.
It typically offers fast switching capabilities, which contribute to improved efficiency in power conversion circuits. The FGW75N60HD is packaged in a TO-220 or similar format, facilitating easy heat dissipation and integration into various electronic designs.
Key specifications include a maximum gate-source voltage (Vgs) of ±20V and a total gate charge (Qg) that allows for efficient drive under various operating conditions. Overall, the FGW75N60HD is an excellent choice for engineers seeking reliable and efficient performance in high-voltage applications.

Features

The FGW75N60HD is a N-channel MOSFET designed for high-voltage applications. Key features include:
- Voltage Rating: 600V maximum drain-source voltage, suitable for high-voltage circuits.
- Current Rating: Continuous drain current of 75A, allowing for robust performance in power applications.
- RDS(on): Low on-resistance (typically around 0.75 ohms), resulting in efficient performance and reduced power losses during operation.
- Gate Threshold Voltage: Typical gate threshold voltage between 2-4V, enabling easy drive requirements.
- Fast Switching: Capable of high-speed switching, making it suitable for applications in inverters, converters, and switch-mode power supplies.
- Package Type: Available in TO-220 and DPAK packages, facilitating easy integration into various PCB designs.
- Thermal Resistance: Good thermal performance ensures reliable operation in demanding environments.
This combination of features makes the FGW75N60HD ideal for applications in industrial power supplies, motor drives, and renewable energy systems.

Package

The FGW75N60HD is packaged in a TO-247 format, which is a popular package type for power MOSFETs. This package provides good thermal performance and is suitable for high-power applications.

Pinout

The FGW75N60HD is an N-channel MOSFET designed for high voltage applications. It typically comes in a TO-220 package, which has three pins.
Pin Configuration:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage here allows current to flow between the drain and source.
2. Drain (D) - This pin is connected to the load. It allows current to flow out of the MOSFET to the load when the device is activated.
3. Source (S) - This pin is connected to the ground or the negative side of the circuit. It serves as the return path for the current flowing through the MOSFET.
Key Specifications:
- Voltage Rating: 600V
- Continuous Drain Current: 75A
- On-Resistance: Low, allowing efficient operation.
The FGW75N60HD is suitable for applications like power conversion and motor control.

Manufacturer

The FGW75N60HD is manufactured by Fairchild Semiconductor, a company known for its expertise in power management and analog semiconductor solutions. Fairchild specializes in providing a wide range of products, including power MOSFETs, integrated circuits, and other semiconductor devices used in various applications such as automotive, industrial, and consumer electronics. The company focuses on innovation and efficiency in power solutions, catering to the growing demand for energy-efficient technologies. Fairchild is recognized for its commitment to quality and reliability in the semiconductor industry.

Application

The FGW75N60HD is an N-channel MOSFET primarily used in power electronics applications. Key areas include power supplies, DC-DC converters, motor drives, and inverters for renewable energy systems. Its high voltage and current ratings make it suitable for industrial automation, electric vehicles, and high-efficiency switching applications. Additionally, it can be utilized in consumer electronics for efficient power management.

Equivalent

The FGW75N60HD is a high-voltage MOSFET with a voltage rating of 600V and a current rating of 75A. Equivalent products include the STW75N60M2, IRF750, and MGF75N60HD. Ensure to verify specifications like RDS(on), gate threshold voltage, and package type to confirm compatibility for your application.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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