FGH75T65UPD

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FGH75T65UPD

IGBT 650V 150A 375W TO-247AB

  • Fabricant
  • Mfr. Partie #FGH75T65UPD
  • Paquet TO-247
  • Fiche de données
  • En stock5574

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Spécifications

Package Bulk
ProductStatus Not For New Designs
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 650 V
Current-Collector(Ic)(Max) 150 A
Current-CollectorPulsed(Icm) 225 A
Vce(on)(Max)@VgeIc 2.3V @ 15V, 75A
Power-Max 375 W
SwitchingEnergy 2.85mJ (on), 1.2mJ (off)
InputType Standard
GateCharge 385 nC
Td(on/off)@25°C 32ns/166ns
TestCondition 400V, 75A, 3Ohm, 15V
ReverseRecoveryTime(trr) 85 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Vue d'ensemble

Description

The FGH75T65UPD is a high-performance N-channel power MOSFET designed for efficient switching applications in power electronics. It features a voltage rating of 650V and a continuous drain current of 75A, making it suitable for high-voltage applications. Its low on-resistance (R_DS(on)) minimizes conduction losses, enhancing overall efficiency in circuits such as inverters, converters, and power supplies.
Key specifications include fast switching capabilities, reduced gate charge, and thermal stability, which contribute to improved system performance and reliability. The device is typically packaged in a TO-220 or similar housing, facilitating effective heat dissipation.
The FGH75T65UPD is ideal for various applications, including renewable energy systems, electric vehicles, and industrial automation, where high efficiency and reliability are crucial. Proper thermal management and design considerations are essential when integrating this MOSFET into electronic systems.

Features

The FGH75T65UPD is a high-performance N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: Typically rated for a maximum drain-source voltage (Vds) of 650V, making it suitable for high-voltage applications.

2. Current Rating: Can handle continuous drain currents up to 75A, providing robust performance in demanding settings.
3. Rds(on): Low on-resistance (typically around 0.065 ohms), which reduces power losses and improves efficiency.
4. Gate Threshold Voltage: Features a suitable gate threshold voltage (Vgs(th)) for easy drive compatibility.
5. Fast Switching Speed: Designed for reduced switching losses, ideal for high-frequency applications.
6. Thermal Performance: Good thermal stability and a low thermal resistance, enhancing reliability in thermal management.
7. Package Type: Available in TO-220 or similar packages, facilitating heat dissipation and easy integration into circuits.
These features make the FGH75T65UPD a popular choice for applications such as power converters, motor drives, and industrial power supplies.

Package

The FGH75T65UPD is typically housed in a TO-247 package type, which is a standard package used for high-power transistors and MOSFETs. This package provides good thermal performance and is suitable for applications requiring efficient heat dissipation.

Pinout

The FGH75T65UPD is a N-channel MOSFET with a pin count of 6. Its main functions include acting as a power switch in various applications, such as inverters, converters, and motor drives.
The pins are typically designated as follows:
1. Gate (G): Controls the MOSFET's operation by applying a voltage to turn it on or off.
2. Drain (D): The terminal through which the main current flows when the device is on.
3. Source (S): The terminal connected to the ground or power supply; current exits through this pin.
4. Body Diode (integrated): Provides a path for current when the MOSFET is off, useful in applications requiring reverse current flow.
This device is designed for high-efficiency switching and can handle significant current and voltage. Always consult the specific datasheet for detailed specifications and pin configurations.

Manufacturer

The FGH75T65UPD is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in various areas, including power management, analog, logic, timing, connectivity, and custom devices. The company focuses on providing high-performance components for a wide range of applications, including automotive, industrial, consumer electronics, and communications. Founded in 1999, ON Semiconductor has grown through a series of acquisitions and aims to enable energy-efficient designs and improve performance through innovative semiconductor technologies.

Application

The FGH75T65UPD is a high-voltage, high-current IGBT (Insulated Gate Bipolar Transistor) primarily used in applications such as motor drives, industrial power supplies, renewable energy systems (like solar inverters), and UPS (uninterruptible power supplies). Its efficiency and fast switching capabilities make it suitable for controlling power in various industrial and consumer electronics applications.

Equivalent

The FGH75T65UPD is a 650V, 75A N-channel MOSFET. Equivalent products include the STP75NF65, IRF3205, and IXFH75N65. When selecting an equivalent, ensure the voltage, current ratings, RDS(on), and thermal characteristics match your application requirements.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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