FGH75T65SQDT

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FGH75T65SQDT

IGBTs 650V 75A FS4 TRENCH IGBT

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  • Mfr. Partie #FGH75T65SQDT
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Spécifications

Packaging Tube
Standard Pack Qty 450

Vue d'ensemble

Description

The FGH75T65SQDT is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications in power electronics. With a voltage rating of 650V and a continuous drain current of up to 75A, it is suitable for use in devices like power supplies, motor drives, and converters.
This MOSFET features low on-resistance (RDS(on)), which improves efficiency by reducing power loss during operation. It also has fast switching capabilities, making it ideal for high-frequency applications.
The device is typically housed in a TO-247 package, allowing for efficient heat dissipation, which is crucial for reliable performance in demanding environments. Its rugged construction ensures robustness against voltage spikes and thermal stress.
Overall, the FGH75T65SQDT is well-suited for engineers looking to enhance the efficiency and performance of their power electronic designs.

Features

The FGH75T65SQDT is a high-voltage N-channel MOSFET designed for various applications including power management and switching. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: It has a continuous drain current (I_D) rating of 75A, allowing it to handle significant load currents.
3. Low R_DS(on): The on-resistance (R_DS(on)) is low, enhancing efficiency by minimizing conduction losses.
4. Fast Switching Speed: The device offers high-speed switching capabilities, beneficial for applications like converters and inverters.
5. Thermal Performance: It has a robust thermal management profile, with a maximum junction temperature (T_J) supporting high operational efficiency.
6. Package Type: Housed in a TO-220 package, it facilitates easy heat dissipation and mounting.
These features make the FGH75T65SQDT ideal for use in power supplies, motor drives, and renewable energy systems.

Package

The FGH75T65SQDT is typically packaged in a TO-247 format, which is a robust package suitable for high-power applications. This package design provides good thermal performance and ease of mounting on heatsinks for effective heat dissipation.

Pinout

The FGH75T65SQDT is a high-voltage N-channel MOSFET. It features a pin count of 5. The typical functions of its pins are as follows:
1. Gate (G): Controls the MOSFET's on/off state by applying voltage.
2. Drain (D): The terminal through which current flows out when the MOSFET is on.
3. Source (S): The terminal through which current enters the MOSFET.
The device is designed for applications that require efficient switching and high performance, often in power electronics, motor drives, and renewable energy systems. Always refer to the specific datasheet for detailed electrical characteristics and pin configuration.

Manufacturer

The FGH75T65SQDT is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor after being acquired in 2016. Fairchild Semiconductor specializes in semiconductor solutions, focusing on a wide range of products including power management, signal processing, and discrete components. The FGH75T65SQDT is specifically a high-voltage MOSFET, commonly used in applications such as power supplies, motor drives, and other power conversion systems. ON Semiconductor continues to provide innovative semiconductor technologies and solutions across various industries, including automotive, industrial, and consumer electronics.

Application

The FGH75T65SQDT is a high-voltage IGBT (Insulated Gate Bipolar Transistor) used in various applications, including motor drives, power inverters, renewable energy systems (like solar and wind), industrial automation, and electric vehicles. Its high efficiency and fast switching capabilities make it suitable for applications requiring robust performance and reliability in power electronics.

Equivalent

The FGH75T65SQDT is a 650V, 75A N-channel MOSFET. Equivalent products include:
1. IRF320 – 60V, 75A, suitable for lower voltage applications.
2. STP75NF75 – 75V, 75A, offers similar current capacity.
3. IXFH75N65P – 650V, 75A, similar voltage and current ratings.
Always verify specifications for your specific application requirements.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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