FGH75T65SHD-F155

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FGH75T65SHD-F155

IGBT TRENCH FS 650V 150A TO-247

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Spécifications

Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 150 A
Current - Collector Pulsed (Icm) 225 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Power - Max 455 W
Switching Energy 2.4mJ (on), 720µJ (off)
Input Type Standard
Gate Charge 123 nC
Td (on/off) @ 25°C 28ns/80ns
Test Condition 400V, 75A, 3Ohm, 15V
Reverse Recovery Time (trr) 43.4 ns
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number FGH75

Vue d'ensemble

Description

The FGH75T65SHD-F155 is a high-performance N-channel MOSFET designed for power conversion applications, such as DC-DC converters and motor drives. It features a low on-resistance (Rds(on)), which minimizes conduction losses, enhancing efficiency in power management systems. With a maximum drain-source voltage of 650V and a continuous drain current rating of 75A, it is suitable for high-voltage applications.
The device is housed in a TO-247 package, facilitating efficient heat dissipation. It boasts fast switching speeds, making it ideal for high-frequency applications. The FGH75T65SHD-F155 is particularly valued in renewable energy systems, electric vehicles, and industrial automation, where reliability and efficiency are crucial. Its robust design also provides excellent thermal stability, ensuring performance under varying operating conditions. Overall, this MOSFET is an excellent choice for engineers seeking reliable and efficient components for advanced power electronics applications.

Features

The FGH75T65SHD-F155 is a high-performance power MOSFET designed for various applications, including industrial and automotive sectors. Key features include:
1. Voltage Rating: Typically rated for high voltage applications, making it suitable for switching and amplification.
2. Low On-Resistance (RDS(on)): This ensures minimal power loss and improved efficiency during operation.
3. High Current Handling: Designed to support substantial current loads, making it ideal for power management systems.
4. Fast Switching Speed: Enhanced switching capabilities reduce transition losses, allowing for better performance in high-frequency applications.
5. Thermal Management: Equipped with a robust package that aids in heat dissipation, ensuring reliability under demanding conditions.
6. Gate Threshold Voltage: Optimized for compatibility with standard logic levels, facilitating easy interfacing with microcontrollers and other digital logic devices.
7. Applications: Commonly used in DC-DC converters, motor drives, and power supplies.
Overall, the FGH75T65SHD-F155 combines efficiency, reliability, and versatility for various electronic applications.

Package

The FGH75T65SHD-F155 is typically packaged in a TO-247 package type. This package design is known for its robust construction, suitable for high-power applications, and offers good thermal performance and ease of mounting.

Pinout

The FGH75T65SHD-F155 is an N-channel MOSFET with a pin count of 7. It is designed for high-voltage applications and is commonly used in power conversion and switching applications.
The pin functions are as follows:
1. Gate (G): Controls the MOSFET's switching operation.
2. Source (S): Connects to the source terminal of the MOSFET.
3. Drain (D): Connects to the drain terminal of the MOSFET.
4. Gate Drive (GD): Used for connecting the gate driver circuit.
5. Auxiliary Pins (A1, A2): Typically used for additional functionality like sensing or control, depending on the specific configuration of the device.
This MOSFET is noted for its low on-resistance and high-speed switching capabilities, making it suitable for various power management applications.

Manufacturer

The FGH75T65SHD-F155 is manufactured by ON Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor solutions, including power management, analog, and digital components, catering to various industries such as automotive, communications, consumer electronics, and industrial applications. The company's focus is on enabling energy-efficient designs and advancing technology in the semiconductor sector.

Application

The FGH75T65SHD-F155 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) designed for applications such as industrial motor drives, renewable energy systems (like solar inverters), power supplies, and welding equipment. Its high efficiency and switching speed make it suitable for applications requiring reliable performance in power conversion and control.

Equivalent

The FGH75T65SHD-F155 is a MOSFET from ON Semiconductor. Equivalent products include the Infineon IPW75R065CP and the Nexperia PSMN2R8-80BS. Other alternatives may include devices from manufacturers like STMicroelectronics or Vishay that match the same voltage, current rating, and R_DS(on) characteristics. Always verify specifications to ensure compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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