FGH60N60SMD

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FGH60N60SMD

IGBT FIELD STOP 600V 120A TO247

  • Fabricant
  • Mfr. Partie #FGH60N60SMD
  • Paquet TO-247
  • Fiche de données
  • En stock2634

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Spécifications

Package Tube
ProductStatus Active
IGBTType Field Stop
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 120 A
Current-CollectorPulsed(Icm) 180 A
Vce(on)(Max)@VgeIc 2.5V @ 15V, 60A
Power-Max 600 W
SwitchingEnergy 1.26mJ (on), 450µJ (off)
InputType Standard
GateCharge 189 nC
Td(on/off)@25°C 18ns/104ns
TestCondition 400V, 60A, 3Ohm, 15V
ReverseRecoveryTime(trr) 39 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Vue d'ensemble

Description

The FGH60N60SMD is a high-performance N-channel MOSFET designed for various power applications, including power supplies, motor drives, and automotive systems. With a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 60A, it offers robust performance in high-voltage environments. The device features a low on-resistance (Rds(on)), which minimizes power losses and enhances efficiency.
Its SMD (Surface Mount Device) packaging facilitates easier assembly and better thermal management in compact designs. The FGH60N60SMD also has fast switching capabilities, making it suitable for high-frequency applications.
Key parameters include a maximum gate-source voltage (Vgs) of ±20V and a total gate charge (Qg) that influences switching speed. With its reliability and efficiency, the FGH60N60SMD is a popular choice among engineers for designing energy-efficient circuits in various electronic applications.

Features

The FGH60N60SMD is a high-voltage N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: 600V maximum drain-source voltage (V_DS).
2. Current Rating: Continuous drain current of up to 60A, suitable for high-power applications.
3. On-Resistance (R_DS(on)): Low on-resistance of approximately 0.14 ohms at V_GS = 10V, which enhances efficiency by reducing power losses.
4. Gate Threshold Voltage (V_GS(th)): Typically between 2V to 4V, allowing for easy drive by standard control voltages.
5. Package Type: Available in a DPAK package, facilitating efficient thermal management and PCB mounting.
6. Fast Switching: Ideal for applications requiring fast switching speeds, such as inverters and power converters.
7. Robust Thermal Performance: Designed to handle high temperatures, making it suitable for demanding environments.
These features make the FGH60N60SMD suitable for applications in power supplies, motor drives, and other high-frequency switching applications.

Package

The FGH60N60SMD is packaged in a Surface Mount Device (SMD) configuration, specifically designed for easy mounting on circuit boards.

Pinout

The FGH60N60SMD is an N-channel MOSFET commonly used in power applications. It features a TO-220 package with a total of three pins.
Pin Configuration:
1. Gate (G) - Controls the MOSFET's operation by applying a voltage to turn it on or off.
2. Drain (D) - Connects to the load; current flows from drain to source when the MOSFET is on.
3. Source (S) - Connects to the ground or negative supply; current flows from source to drain when the device is conducting.
Function: The FGH60N60SMD is designed to handle high voltage (up to 600V) and high current (up to 60A), making it suitable for applications such as power supplies, motor drives, and other switching applications. Its robust performance and efficiency make it a popular choice in industrial and consumer electronics.

Manufacturer

The FGH60N60SMD is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor following their acquisition in 2016. Fairchild Semiconductor was well-known for its role in the semiconductor industry, specializing in power management, analog, and digital ICs. The FGH60N60SMD is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), typically used in various applications such as power supplies, motor control, and other electronic devices requiring efficient switching. Fairchild's expertise in power semiconductors has made it a significant player in the electronics market, focusing on innovation and high-performance components.

Application

The FGH60N60SMD is a high-voltage N-channel MOSFET primarily used in power electronics applications. Key areas include power supply circuits, motor control, and inverter systems for renewable energy. Its high efficiency and fast switching capabilities make it suitable for industrial automation, automotive power management, and DC-DC converters. Additionally, it can be utilized in lighting control and heating systems where efficient power handling is essential.

Equivalent

The FGH60N60SMD is a 600V, 60A N-channel MOSFET. Equivalent products include:
1. IRF320 (International Rectifier)
2. STP60NF06 (STMicroelectronics)
3. MTP60N60 (ON Semiconductor)
4. IXFH60N60 (IXYS)
Ensure to check the datasheets for specific parameters and ratings to confirm compatibility for your application.

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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