FGH40T120SMD

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FGH40T120SMD

INSULATED GATE BIPOLAR TRANSISTO

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Spécifications

Package Bulk
ProductStatus Active
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 1200 V
Current-Collector(Ic)(Max) 80 A
Current-CollectorPulsed(Icm) 160 A
Vce(on)(Max)@VgeIc 2.4V @ 15V, 40A
Power-Max 555 W
SwitchingEnergy 2.7mJ (on), 1.1mJ (off)
InputType Standard
GateCharge 370 nC
Td(on/off)@25°C 40ns/475ns
TestCondition 600V, 40A, 10Ohm, 15V
ReverseRecoveryTime(trr) 65 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Vue d'ensemble

Description

The FGH40T120SMD is a high-voltage N-channel MOSFET designed for use in various power applications, including converters, inverters, and motor drives. With a voltage rating of 1200V and a continuous drain current of 40A, it offers robust performance in demanding environments. The device is housed in a surface-mount package, facilitating compact designs and efficient thermal management.
Key features include low on-resistance (RDS(on)), which enhances efficiency by minimizing power loss during operation, and fast switching speeds, making it suitable for high-frequency applications. The FGH40T120SMD is also built to withstand high-temperature conditions, ensuring reliability and longevity in various industrial applications.
Additionally, it is compatible with standard drive circuits, making integration into existing designs straightforward. Overall, the FGH40T120SMD is an excellent choice for engineers seeking a reliable, high-performance MOSFET for power electronics applications.

Features

The FGH40T120SMD is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for applications requiring high voltage and current capabilities. Key features include:
1. Voltage Rating: 1200V, suitable for high-voltage applications.
2. Current Rating: 40A, allowing for substantial current handling.
3. Low Switching Losses: Optimized for reduced switching losses, enhancing efficiency.
4. Fast Switching Speed: Enables high-frequency operation, improving overall performance in inverters and converters.
5. Thermal Management: Designed with a low thermal resistance, ensuring efficient heat dissipation.
6. Package Type: Surface mount (DPAK), suitable for automated assembly and compact designs.
7. Robust Construction: Built to withstand harsh conditions, enhancing reliability in various applications.
These features make the FGH40T120SMD ideal for industrial drives, renewable energy systems, and motor control applications.

Package

The FGH40T120SMD is packaged in a Surface-Mount Device (SMD) format, specifically designed for efficient thermal management and compact integration in electronic circuits.

Pinout

The FGH40T120SMD is a power MOSFET from the FGH series, designed for high-voltage applications. It typically features a TO-247 package with a pin count of 3. The functions of the pins are as follows:
1. Gate (G): This pin is used to control the MOSFET's switching operation. Applying a voltage to the gate allows current to flow between the drain and source.

2. Drain (D): This pin connects to the load. It is the terminal through which the main current flows when the device is turned on.
3. Source (S): This pin connects to the ground or the return path of the circuit. It is the terminal through which the current exits the MOSFET.
The FGH40T120SMD is suitable for applications in power supplies, motor drives, and other high-efficiency switching applications. Always refer to the manufacturer's datasheet for detailed specifications and characteristics.

Manufacturer

The FGH40T120SMD is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor is known for its innovations in the field of semiconductor technology, focusing on power management, analog, and discrete semiconductor solutions. The company primarily serves various industries, including automotive, industrial, and consumer electronics, providing components such as transistors, diodes, and integrated circuits. The FGH40T120SMD, specifically, is a high-voltage IGBT (Insulated Gate Bipolar Transistor) used in applications requiring efficient power control and conversion.

Application

The FGH40T120SMD is a high-voltage IGBT (Insulated Gate Bipolar Transistor) used in various applications, including power inverters for renewable energy systems, motor drives, welding equipment, and industrial machinery. Its fast switching capabilities and high efficiency make it suitable for applications requiring energy conversion and control, such as electric vehicles, UPS systems, and induction heating.

Equivalent

The FGH40T120SMD is a 1200V, 40A IGBT. Equivalent products include the Infineon IGBT series, such as the IKW40N120T2 and the IXYS IXGH40N120. Additionally, the ON Semiconductor MGF40N120 and the Mitsubishi CM120DY-12NF are comparable options. Always check specific datasheets for voltage, current, and thermal characteristics to ensure compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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