FGH40N60UFDTU

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FGH40N60UFDTU

IGBT FIELD STOP 600V 80A TO247-3

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Spécifications

Supplier Rochester Electronics, LLC,onsemi
Package Bulk,Tube
ProductStatus Active
IGBTType Field Stop
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 80 A
Current-CollectorPulsed(Icm) 120 A
Vce(on)(Max)@VgeIc 2.4V @ 15V, 40A
Power-Max 290 W
SwitchingEnergy 1.19mJ (on), 460µJ (off)
InputType Standard
GateCharge 120 nC
Td(on/off)@25°C 24ns/112ns
TestCondition 400V, 40A, 10Ohm, 15V
ReverseRecoveryTime(trr) 45 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Vue d'ensemble

Description

The FGH40N60UFDTU is a high-performance N-channel MOSFET designed for power electronics applications. It features a maximum drain-source voltage (V_DS) of 600 volts and a continuous drain current (I_D) of 40 amperes, making it suitable for high-voltage and high-current switches. Its low on-resistance (R_DS(on)) minimizes conduction losses, enhancing efficiency in power conversion applications such as switching power supplies, inverters, and motor drives.
The device benefits from a fast switching speed, which is essential for efficient operation in high-frequency applications. The FGH40N60UFDTU is typically housed in a TO-220 package, providing good thermal performance and ease of mounting on heatsinks.
Key specifications include a gate threshold voltage (V_GS(th)) range that allows for easy driving and compatibility with various gate drive circuits. Overall, the FGH40N60UFDTU is favored in industrial and consumer applications where reliability and thermal performance are crucial.

Features

The FGH40N60UFDTU is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: Operates at 600V, making it suitable for high-voltage power supplies.
2. Current Rating: Capable of handling continuous drain current of up to 40A, allowing for significant load driving capabilities.
3. R_DS(on): Low on-resistance (typically around 0.12 ohms), which minimizes conduction losses and enhances efficiency.
4. Gate Threshold Voltage: V_GS(th) ranges from 2V to 4V, permitting operation with standard gate drive voltages.
5. Fast Switching: Designed for rapid switching applications, improving overall performance in converters and inverters.
6. Package: Available in a TO-220 package, providing effective heat dissipation and ease of mounting.
7. Thermal Characteristics: Low thermal resistance, which aids in managing heat during operation.
These features make the FGH40N60UFDTU ideal for applications such as switch-mode power supplies, motor drives, and other high-efficiency power conversion systems.

Package

The FGH40N60UFDTU is packaged in a DPAK or TO-252 package type. This package is designed for surface mounting and features three terminals for easy integration into electronic circuits.

Pinout

The FGH40N60UFDTU is an N-channel MOSFET from the Fairchild Semiconductor (now part of ON Semiconductor) family. It features a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the output pin where the current flows out of the MOSFET. It connects to the load in a circuit.
3. Source (S): This pin serves as the input for current into the MOSFET. It is typically connected to ground or a lower potential in a circuit.
The FGH40N60UFDTU is rated for high voltage (600V) and high current (40A) applications, making it suitable for various power management and switching applications in electronic circuits.

Manufacturer

The FGH40N60UFDTU is manufactured by ON Semiconductor, a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components. ON Semiconductor provides various products, including power management, analog, logic, and connectivity solutions, catering to diverse industries such as automotive, industrial, and consumer electronics. The company is known for its focus on energy-efficient technologies and innovative solutions that address the increasing demand for smart and connected devices.

Application

The FGH40N60UFDTU is a high-voltage N-channel MOSFET widely used in power switching applications. Key application areas include power supplies, motor control systems, industrial equipment, and automotive electronics. It's suitable for high-frequency operation and can handle significant power levels, making it ideal for inverters, converters, and other energy-efficient designs in renewable energy systems.

Equivalent

The FGH40N60UFDTU is an N-channel MOSFET. Equivalent products include the IRFHC40N60, STP40NF60, and MTP40N60. Ensure to check specifications such as voltage rating, current rating, and RDS(on) for compatibility before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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