FGH20N60SFDTU

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FGH20N60SFDTU

IGBT FIELD STOP 600V 40A TO247

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Spécifications

Part Status Obsolete
IGBT Type Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 60 A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 20A
Power - Max 165 W
Switching Energy 370µJ (on), 160µJ (off)
Input Type Standard
Gate Charge 65 nC
Td (on/off) @ 25°C 13ns/90ns
Test Condition 400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) 34 ns
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number FGH20

Vue d'ensemble

Description

The FGH20N60SFDTU is a high-voltage, N-channel MOSFET designed for use in power switching applications. It boasts a high breakdown voltage of 600V, making it suitable for applications like power supplies, motor drives, and inverters where efficiency and thermal performance are critical.
Key features include a low on-resistance, which reduces conduction losses, and fast switching capabilities, enhancing overall system efficiency. The device typically comes in a TO-220 package, allowing for easy heat dissipation, and is designed to handle high currents, typically rated up to 20A.
The FGH20N60SFDTU is ideal for applications requiring robust performance under demanding conditions, and its reliability makes it a preferred choice among engineers for various industrial and consumer electronics applications. Proper thermal management and adequate gate drive circuits are essential to fully utilize its capabilities.

Features

The FGH20N60SFDTU is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: Capable of handling up to 600V, making it suitable for high-voltage applications.
2. Current Rating: Supports continuous drain current of up to 20A, ideal for various power switching roles.
3. RDS(on): Low on-state resistance (typically around 0.24 ohms at VGS = 10V), which enhances efficiency by minimizing power loss during operation.
4. Gate Threshold Voltage: Offers a gate threshold voltage range (VGS(th)) between 2 to 4V, allowing for compatibility with low-voltage drive circuits.
5. Fast Switching Speed: Designed for high-speed switching applications, enabling efficient operation in modern power electronics.
6. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
7. Applications: Suitable for use in power supplies, motor drives, and other industrial applications requiring high reliability and efficiency.
Overall, the FGH20N60SFDTU is ideal for demanding power management tasks in various electronic systems.

Package

The FGH20N60SFDTU is typically packaged in a TO-247 package type, which is designed for high-power applications, providing efficient thermal management and ease of mounting.

Pinout

The FGH20N60SFDTU is an N-channel MOSFET with a pin count of 4. It is designed for high-voltage applications and is commonly used in power switching. The typical pin configuration is as follows:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The terminal through which the load current flows when the MOSFET is on.
3. Source (S): The terminal connected to the ground or the lower potential in the circuit.
The FGH20N60SFDTU features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 20A, making it suitable for various power management applications, including switching power supplies and motor control. Its low gate charge and fast switching capabilities enhance efficiency in power electronic circuits.

Manufacturer

The FGH20N60SFDTU is manufactured by Fairchild Semiconductor, a company known for producing a wide range of semiconductor products. Fairchild Semiconductor specializes in power management, analog, and mixed-signal devices, as well as discrete components like MOSFETs, diodes, and IGBTs. The company caters to various industries, including automotive, consumer electronics, industrial, and telecommunications. In 2016, Fairchild was acquired by ON Semiconductor, which has further expanded its portfolio and capabilities in the semiconductor market.

Application

The FGH20N60SFDTU is a N-channel MOSFET primarily used in power electronics applications, including power supplies, motor drives, and inverters. Its high voltage and current ratings make it suitable for industrial equipment, renewable energy systems, and electric vehicles. Additionally, it can be utilized in switching applications, amplifiers, and as a part of power management circuits.

Equivalent

The FGH20N60SFDTU is a 600V N-channel MOSFET. Equivalent products include:
1. IRFPG50 - 500V, 20A MOSFET
2. MTP20N60E - 600V, 20A MOSFET
3. STP20NM60 - 600V, 20A MOSFET
4. IXFH20N60 - 600V, 20A MOSFET
Always verify specifications and performance characteristics to ensure compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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