FGD5T120SH

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FGD5T120SH

IGBT 1200V 5A FS3 DPAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 1200 V
Current-Collector(Ic)(Max) 10 A
Current-CollectorPulsed(Icm) 12.5 A
Vce(on)(Max)@VgeIc 3.6V @ 15V, 5A
Power-Max 69 W
SwitchingEnergy 247µJ (on), 94µJ (off)
InputType Standard
GateCharge 6.7 nC
Td(on/off)@25°C 4.8ns/24.8ns
TestCondition 600V, 5A, 30Ohm, 15V
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

Vue d'ensemble

Description

The FGD5T120SH is a high-performance N-channel MOSFET designed for power switching applications. With a maximum voltage rating of 120V and a continuous drain current of 5A, it is well-suited for use in DC-DC converters, motor drives, and other high-voltage applications. The device features a low on-resistance, ensuring efficient operation and reduced heat generation. Its fast switching capabilities make it ideal for applications that require quick response times. Additionally, the FGD5T120SH is housed in a TO-220 package, facilitating easy heat dissipation and mounting. This MOSFET is often used in various industrial, automotive, and consumer electronics applications due to its reliability and performance characteristics. Overall, the FGD5T120SH is a versatile component for engineers looking to optimize power management in their designs.

Features

The FGD5T120SH is an N-channel power MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 120V, making it suitable for various high-voltage applications.
2. Current Rating: The maximum continuous drain current (I_D) is approximately 50A, allowing it to handle significant loads.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of around 0.14 ohms, which helps reduce power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) typically ranges from 2 to 4V, ensuring compatibility with low-voltage gate drive circuits.
5. Package Type: It is available in a TO-220 package, facilitating efficient heat dissipation and easy mounting.
6. Applications: Commonly used in power supplies, motor drives, and inverters due to its reliability and efficiency.
Overall, the FGD5T120SH is ideal for applications requiring robust performance in a compact form factor.

Package

The FGD5T120SH is housed in a TO-220 package type, which is a popular format for high-power transistors and MOSFETs, providing efficient heat dissipation and easy mounting options.

Pinout

The FGD5T120SH is an IGBT (Insulated Gate Bipolar Transistor) module with a pin count of 5. Its primary function is to control high power in various applications, including motor drives, power inverters, and other high-voltage circuits.
The key pins typically include:
1. Gate (G) - for controlling the switching of the IGBT.
2. Collector (C) - connected to the high voltage side.
3. Emitter (E) - connected to the low voltage side or ground.
4. N/C (Not Connected) - often included for layout or mechanical reasons.
5. Tab (or case) - for heat dissipation.
This IGBT module is designed to handle significant current and voltage levels, making it suitable for industrial applications. Always refer to the specific datasheet for detailed specifications and electrical characteristics.

Manufacturer

The FGD5T120SH is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor specializes in the design and manufacture of a wide range of semiconductor products, including power management, analog, and discrete devices. The company is known for its innovation in the semiconductor industry and serves various markets such as automotive, industrial, telecommunications, and consumer electronics. Its products are vital for applications requiring efficient energy management and signal processing. ON Semiconductor continues to build on Fairchild's legacy by offering advanced semiconductor solutions that meet the evolving needs of modern technology.

Application

The FGD5T120SH is a N-channel MOSFET commonly used in various applications, including power management, motor control, and switching power supplies. It is suitable for use in automotive electronics, industrial automation, and renewable energy systems. Its high voltage and current handling capabilities make it ideal for rail applications, LED drivers, and battery management systems.

Equivalent

The FGD5T120SH is a N-channel MOSFET. Equivalent products include the FQP30N120, IRF540, STP30NF120, and MTP30N120. Always verify specifications such as voltage, current rating, and Rds(on) to ensure compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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