FGAF40S65AQ

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FGAF40S65AQ

IGBT TRENCH FS 650V 80A TO-3PF-3

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Spécifications

Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 160 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A
Power - Max 94 W
Switching Energy 132µJ (on), 62µJ (off)
Input Type Standard
Gate Charge 75 nC
Td (on/off) @ 25°C 17.8ns/81.6ns
Test Condition 400V, 10A, 6Ohm, 15V
Reverse Recovery Time (trr) 274 ns
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Supplier Device Package TO-3PF-3
Base Product Number FGAF40

Vue d'ensemble

Description

The FGAF40S65AQ is a silicon carbide (SiC) MOSFET designed for high-efficiency power applications. It features a voltage rating of 650V and a current rating of 40A, making it suitable for use in various applications such as power supplies, solar inverters, and electric vehicles. SiC technology offers advantages over traditional silicon devices, including higher thermal conductivity, reduced switching losses, and improved efficiency at high temperatures. The FGAF40S65AQ is particularly valued for its fast switching capabilities, which enhance system performance and reduce heat generation. It typically comes in a TO-247 package, facilitating easy integration into existing systems. Overall, this component supports the growing demand for energy-efficient and compact power solutions in modern electronics.

Features

The FGAF40S65AQ is a high-performance power MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (Vds) of 650V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (Id) up to 40A, providing robust performance in demanding environments.
3. Rds(on): The on-resistance is low, typically in the range of a few milliohms, which helps reduce power losses and improve efficiency.
4. Fast Switching: The device offers fast switching capabilities, enhancing performance in high-frequency applications.
5. Thermal Performance: With a high thermal conductivity, it maintains stable operation under varying temperature conditions.
6. Package Type: Available in a TO-220 package, it allows for easy mounting and heat dissipation.
These features make the FGAF40S65AQ suitable for use in applications like power supplies, inverters, and motor drives.

Package

The FGAF40S65AQ is typically packaged in a TO-220 format. This package type provides good thermal performance and ease of mounting, making it suitable for power applications.

Pinout

The FGAF40S65AQ is a 40-pin Field-Effect Transistor (FET) module typically used in power applications. It is designed for high voltage applications and features a 650V rating. The pin configuration typically includes gate, source, and drain terminals for multiple FETs within the package, enabling efficient switching and amplification.
The primary functions of the pins include control signals (gate), input/output connections (source and drain), and may include additional pins for sensing or protection features, depending on the specific design of the module. The package is commonly used in inverters, converters, and other high-power electronic circuits.
For exact pin assignments and detailed specifications, referring to the manufacturer's datasheet is recommended.

Manufacturer

The FGAF40S65AQ is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor was known for its production of a wide range of semiconductor components, including power management devices, analog ICs, and discrete devices like MOSFETs and diodes. The company has a strong focus on innovation and providing solutions for various applications, including automotive, industrial, and consumer electronics. ON Semiconductor continues to build on Fairchild’s legacy, offering a broad portfolio of semiconductor products designed to improve energy efficiency and performance in electronic systems.

Application

The FGAF40S65AQ is a 650V, 40A IGBT (Insulated Gate Bipolar Transistor) primarily used in applications such as motor drives, industrial automation, renewable energy systems (like solar inverters), and power supplies. Its high voltage and current capabilities make it suitable for switching applications in energy-efficient systems and various power electronics circuits.

Equivalent

The FGAF40S65AQ is a 650V, 40A IGBT module. Equivalent products include the Infineon FGH40N65SFD, ON Semiconductor MBRF40R65, and Mitsubishi CM40DX-24H. For specific applications, similar specifications can also be found in products from other manufacturers like Toshiba and STMicroelectronics. Always verify the datasheets for exact compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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