FGAF20N60SMD

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FGAF20N60SMD

IGBT FIELD STOP 600V 40A TO3PF

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Spécifications

Package Bulk,Tube
ProductStatus Obsolete
IGBTType Field Stop
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 40 A
Current-CollectorPulsed(Icm) 60 A
Vce(on)(Max)@VgeIc 1.7V @ 15V, 20A
Power-Max 75 W
SwitchingEnergy 452µJ (on), 141µJ (off)
InputType Standard
GateCharge 64 nC
Td(on/off)@25°C 12ns/91ns
TestCondition 400V, 20A, 10Ohm, 15V
ReverseRecoveryTime(trr) 26.7 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-3P-3 Full Pack

Vue d'ensemble

Description

The FGAF20N60SMD is a high-voltage N-channel MOSFET designed for power applications. It features a voltage rating of 600V and a current rating of 20A, making it suitable for high-efficiency switching in power supplies, inverters, and motor drives. The SMD (Surface Mount Device) packaging allows for easier integration into compact circuit designs, improving thermal performance due to its lower thermal resistance.
Key specifications include a low on-resistance (Rds(on)) for reduced conduction losses, a high-speed switching capability, and a maximum gate-source voltage of ±20V. The FGAF20N60SMD is commonly utilized in applications requiring robust performance and reliability, including renewable energy systems and industrial automation.
Its design incorporates advanced semiconductor technology, ensuring effective operation under demanding conditions while optimizing power efficiency. Suitable for both novice and experienced engineers, the FGAF20N60SMD is a reliable choice for modern power management solutions.

Features

The FGAF20N60SMD is a high-voltage N-channel MOSFET designed for efficient power switching applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It can handle a continuous drain current (I_D) of up to 20A, allowing it to drive substantial loads.
3. Low R_DS(on): The device has a low on-resistance, typically around 0.24Ω, which reduces power losses during operation.
4. Fast Switching: The MOSFET is optimized for fast switching speeds, which enhances efficiency in high-frequency applications.
5. Surface-Mount Design: Its SMD package facilitates easy integration into compact circuit designs, improving thermal management.
6. Thermal Resistance: It features a low thermal resistance, contributing to better heat dissipation and reliability.
These characteristics make the FGAF20N60SMD suitable for applications in power supplies, motor drives, and other industrial electronics.

Package

The FGAF20N60SMD is packaged in a Surface Mount Device (SMD) format, specifically a DPAK or TO-220 style package. This design allows for efficient thermal management and compact placement on printed circuit boards (PCBs).

Pinout

The FGAF20N60SMD is a power MOSFET with a total of 6 pins. Here are the pin functions:
1. Gate (G): Controls the switching of the MOSFET. It is used to turn the device on and off.
2. Drain (D): The terminal through which the load current flows when the MOSFET is in the on state.
3. Source (S): The terminal connected to the ground or the negative side of the power supply in an N-channel MOSFET configuration.
These three pins (G, D, S) are the primary connections for its operation. The other pins may include:
4. Tab (T): Typically connected to the source for thermal management.
5. Body Diode: Internal to the MOSFET, allowing current to flow in the reverse direction when the device is off.
This MOSFET is designed for high-voltage applications, rated for 20A and 600V.

Manufacturer

The FGAF20N60SMD is manufactured by FGA, which is a part of the ON Semiconductor Corporation. ON Semiconductor is a global semiconductor company that designs, manufactures, and markets a wide range of integrated circuits and discrete components. Their products are used in various applications, including automotive, industrial, consumer electronics, and communication systems. The FGAF20N60SMD is a high-voltage N-channel MOSFET that is commonly used in power management and switching applications. ON Semiconductor focuses on energy-efficient solutions and has a strong emphasis on innovation and sustainability in their product offerings.

Application

The FGAF20N60SMD is a high-voltage N-channel MOSFET primarily used in power electronics applications such as switching regulators, power supplies, motor drivers, and inverters. Its features make it suitable for energy-efficient designs in consumer electronics, industrial automation, and renewable energy systems. Additionally, it is employed in high-frequency applications due to its low switching losses and fast response times.

Equivalent

The FGAF20N60SMD is a MOSFET with similar characteristics to the following equivalent products:
1. STP20NM60
2. IRFBC30
3. FQP20N60
4. PSMN2R8-60B
5. IXFH20N60P
Always verify the specifications to ensure compatibility for your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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