FGA60N65SMD

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FGA60N65SMD

IGBT FIELD STOP 650V 120A TO3P

  • Fabricant
  • Mfr. Partie #FGA60N65SMD
  • Paquet TO-3PN
  • Fiche de données
  • En stock3653

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Spécifications

Package Tube
ProductStatus Active
IGBTType Field Stop
Voltage-CollectorEmitterBreakdown(Max) 650 V
Current-Collector(Ic)(Max) 120 A
Current-CollectorPulsed(Icm) 180 A
Vce(on)(Max)@VgeIc 2.5V @ 15V, 60A
Power-Max 600 W
SwitchingEnergy 1.54mJ (on), 450µJ (off)
InputType Standard
GateCharge 189 nC
Td(on/off)@25°C 18ns/104ns
TestCondition 400V, 60A, 3Ohm, 15V
ReverseRecoveryTime(trr) 47 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-3P-3, SC-65-3

Vue d'ensemble

Description

The FGA60N65SMD is an N-channel MOSFET designed for high-efficiency power applications. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 60A, making it suitable for use in power supplies, motor drivers, and other high-voltage applications. Its low on-resistance (R_DS(on)) reduces power losses during operation, enhancing overall efficiency.
The SMD (Surface Mount Device) package allows for compact designs and improved thermal performance, facilitating easier integration into modern electronic circuits. The device is typically used in switching applications due to its fast switching speeds and robust thermal characteristics.
Key specifications include a maximum gate-source voltage (V_GS) of ±20V, along with a low gate charge (Q_g), which contributes to its rapid switching capabilities. Overall, the FGA60N65SMD is an effective choice for engineers seeking reliable and efficient MOSFET solutions in high-power electronic systems.

Features

The FGA60N65SMD is a high-performance N-channel MOSFET designed for various power electronics applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Continuous Drain Current: The device can handle a continuous drain current (I_D) of 60A, allowing for significant power handling.
3. Low R_DS(on): It features a low on-state resistance (R_DS(on)), which reduces conduction losses and improves efficiency.
4. Fast Switching: The FGA60N65SMD is designed for fast switching capabilities, making it ideal for high-frequency applications.
5. Thermal Performance: It has a robust thermal performance with a maximum junction temperature of 175°C, ensuring reliability under high thermal stress.
Overall, the FGA60N65SMD is suitable for use in applications like power supplies, motor drives, and other industrial electronics where efficiency and reliability are paramount.

Package

The FGA60N65SMD is packaged in a surface-mount device (SMD) configuration, specifically in a DPAK or similar package type. This allows for efficient thermal performance and ease of integration into electronic circuits.

Pinout

The FGA60N65SMD is an N-channel MOSFET designed for high-voltage applications, specifically rated at 650V with a continuous drain current of 60A. It typically comes in a DPAK (TO-252) package, which has a pin count of 3.
The pin functions are as follows:
1. Gate (G): Controls the MOSFET's switching action. A voltage applied to this pin turns the device on or off.
2. Drain (D): The terminal through which the current flows from the drain to the source when the device is on.
3. Source (S): The terminal that connects to the ground or the return path in the circuit.
This MOSFET is commonly used in power supply circuits, motor drives, and other applications requiring efficient switching capabilities.

Manufacturer

The FGA60N65SMD is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor is known for designing and manufacturing a wide range of semiconductor products, including power transistors, diodes, and integrated circuits. The company focuses on providing innovative solutions for various applications in industries such as automotive, industrial, consumer electronics, and telecommunications. Fairchild has a reputation for high-performance and reliable products, particularly in power management and energy-efficient technologies. After being acquired by ON Semiconductor in 2016, it continued to enhance its offerings within the broader portfolio of ON Semiconductor, focusing on advanced power management and energy-efficient semiconductor solutions.

Application

The FGA60N65SMD is an N-channel MOSFET primarily used in power electronics applications. Common areas include switching power supplies, DC-DC converters, motor drives, and inverters for renewable energy systems. Its high voltage and current ratings make it suitable for industrial automation, automotive applications, and electric vehicle systems, ensuring efficient power management and thermal performance.

Equivalent

The FGA60N65SMD is a N-channel MOSFET. Equivalent products include the STP60NF06, IRF3205, and the BUK7Y3R6-60. Always verify specifications such as voltage, current ratings, and RDS(on) before substitution to ensure compatibility in your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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