FGA40N65SMD

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FGA40N65SMD

IGBT FIELD STOP 650V 80A TO3PN

  • Fabricant
  • Mfr. Partie #FGA40N65SMD
  • Paquet TO-3PN
  • Fiche de données
  • En stock2222

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Spécifications

Package Tube
ProductStatus Active
IGBTType Field Stop
Voltage-CollectorEmitterBreakdown(Max) 650 V
Current-Collector(Ic)(Max) 80 A
Current-CollectorPulsed(Icm) 120 A
Vce(on)(Max)@VgeIc 2.5V @ 15V, 40A
Power-Max 349 W
SwitchingEnergy 820µJ (on), 260µJ (off)
InputType Standard
GateCharge 119 nC
Td(on/off)@25°C 12ns/92ns
TestCondition 400V, 40A, 6Ohm, 15V
ReverseRecoveryTime(trr) 42 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-3P-3, SC-65-3

Vue d'ensemble

Description

The FGA40N65SMD is a N-channel MOSFET designed for high-efficiency power management applications. With a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 40A, this device is well-suited for use in switching power supplies, motor drives, and other high-voltage applications.
Key features include low on-resistance (R_DS(on)), which enhances efficiency by reducing power loss during operation. The FGA40N65SMD also offers fast switching speeds, enabling better performance in high-frequency applications. Its SMD (Surface Mount Device) package facilitates ease of integration into compact circuit designs.
The device is designed to withstand high thermal and electrical stresses, making it robust for demanding environments. Additionally, its gate threshold voltage (V_GS(th)) ensures compatibility with standard drive voltages.
Overall, the FGA40N65SMD is an excellent choice for engineers looking to enhance the performance and efficiency of their designs in various industrial and consumer applications.

Features

The FGA40N65SMD is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: 650V maximum drain-source voltage, suitable for high-voltage applications.
2. Current Rating: Continuous current capability up to 40A, allowing for significant power handling.
3. RDS(on): Low on-resistance (typically around 0.4 ohms), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: Low gate threshold voltage enables easier drive requirements.
5. Fast Switching: Features fast switching speeds, making it ideal for high-frequency applications.
6. Package Type: Available in a surface-mount package (DPAK), facilitating efficient thermal management and PCB space savings.
7. Applications: Commonly used in power supplies, motor control, and industrial equipment.
Overall, the FGA40N65SMD is designed for high efficiency and reliability in demanding environments.

Package

The FGA40N65SMD is packaged in a Surface-Mount Device (SMD) format, specifically a DPAK or similar configuration. This style is designed for efficient thermal management and ease of integration into circuit boards.

Pinout

The FGA40N65SMD is an N-channel MOSFET with a pin count of 3. The pins are typically designated as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate turns the MOSFET on or off.
2. Drain (D): The drain pin is where the load current flows out of the MOSFET. It connects to the load side of the circuit.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the current.
The FGA40N65SMD is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 40A. It is commonly used in power electronics applications, including power supplies and motor control circuits.

Manufacturer

The FGA40N65SMD is manufactured by ON Semiconductor, a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components. ON Semiconductor focuses on providing a variety of products, including power management solutions, sensors, and discrete components like MOSFETs, diodes, and integrated circuits. The company serves diverse markets, including automotive, industrial, communications, and consumer electronics, emphasizing energy efficiency and sustainability in its product offerings.

Application

The FGA40N65SMD is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its key application areas include switch-mode power supplies, DC-DC converters, inverter circuits, and motor control systems. It is suitable for high-efficiency designs in energy conversion, renewable energy systems, and electric vehicles, thanks to its low on-resistance and fast switching capabilities.

Equivalent

The FGA40N65SMD is a 650V, 40A N-channel MOSFET. Equivalent products include:
1. IRFHE40 - International Rectifier
2. STP40NF65 - STMicroelectronics
3. BSS123 - Nexperia (for lower power applications)
4. AUIRFG40 - Infineon
Always check the specific datasheet for voltage, current, R_DS(on), and other parameters for compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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