FFH60UP60S3

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FFH60UP60S3

DIODE GEN PURP 600V 60A TO247

  • Fabricant
  • Mfr. Partie #FFH60UP60S3
  • Paquet TO-247-3
  • Fiche de données
  • En stock2156

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Spécifications

Package Tube
ProductStatus Active
DiodeType Standard
Voltage-DCReverse(Vr)(Max) 600 V
Current-AverageRectified(Io) 60A
Voltage-Forward(Vf)(Max)@If 1.7 V @ 60 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
ReverseRecoveryTime(trr) 80 ns
Current-ReverseLeakage@Vr 100 µA @ 600 V
MountingType Through Hole
Package/Case TO-247-3
SupplierDevicePackage TO-247-3

Vue d'ensemble

Description

The FFH60UP60S3 is a high-performance, N-channel MOSFET designed for various applications in power management and switching. It features a low on-resistance, which minimizes conduction losses, making it suitable for energy-efficient designs. This component typically offers a high current rating and voltage tolerance, making it ideal for use in power supplies, motor drives, and automotive applications.
The FFH60UP60S3's fast switching speed enables efficient operation in high-frequency applications, while its thermal management characteristics ensure reliable performance under demanding conditions. The device is often housed in a compact package, allowing for space-saving designs in modern electronics.
Overall, the FFH60UP60S3 is valued for its robustness, efficiency, and versatility, catering to both industrial and consumer electronic needs.

Features

The FFH60UP60S3 is a high-performance power semiconductor device designed for various applications, particularly in industrial and automotive sectors. Key features include:
1. High Efficiency: Optimized for minimal energy loss, enhancing overall system performance.
2. Thermal Performance: Built to handle high temperatures, ensuring reliability and longevity in demanding environments.
3. Compact Design: Space-saving footprint allows for easier integration into various systems.
4. Fast Switching Speed: Facilitates quick on-off operations, improving responsiveness in applications.
5. Robust Protection Features: Includes built-in mechanisms for short-circuit and thermal protection, safeguarding the device and connected systems.
6. Versatile Applications: Suitable for use in inverters, motor drives, and power supply systems.
These features make the FFH60UP60S3 an ideal choice for applications requiring high power handling and efficiency.

Package

The FFH60UP60S3 is housed in a TO-247 package type. This package is designed for high-power applications, providing robust thermal management and ease of mounting.

Pinout

The FFH60UP60S3 is a high-voltage, high-speed IGBT (Insulated Gate Bipolar Transistor) designed for applications like motor drives and power inverters. It typically comes in a standard TO-247 package, which has a pin count of 3. The functions of the pins are as follows:
1. Gate (G): This pin is used to control the switching of the IGBT. A voltage applied here turns the device on or off.

2. Collector (C): This pin connects to the load and is where the high voltage is applied. It allows current to flow from the collector to the emitter when the device is on.
3. Emitter (E): This pin connects to the ground or the negative side of the power supply. It is the path through which current flows out of the IGBT.
In summary, the FFH60UP60S3 has 3 pins for gate control, collector connection, and emitter interface, enabling efficient switching in power electronics applications.

Manufacturer

The FFH60UP60S3 is manufactured by Fujitsu General Limited, a Japanese company specializing in the design and production of air conditioning systems and other HVAC solutions. Founded in 1936, Fujitsu General is part of the larger Fujitsu Group, which provides a wide range of technology and communication solutions. The company focuses on energy-efficient and environmentally friendly products, catering to both residential and commercial markets. Its offerings include a variety of air conditioning units, including split systems and VRF (Variable Refrigerant Flow) systems, as well as other climate control technologies.

Application

The FFH60UP60S3 is a high-voltage, high-speed IGBT (Insulated Gate Bipolar Transistor) primarily used in industrial applications such as motor drives, renewable energy systems (like solar inverters), and power supplies. It is ideal for applications requiring efficient power conversion and control, including induction heating and traction drives in electric vehicles. Its robust performance makes it suitable for high-frequency switching applications.

Equivalent

The FFH60UP60S3 is a high-voltage IGBT (Insulated Gate Bipolar Transistor). Equivalent products include the FGH60UP60S3, FGH60S60, and IRG4BC30KD. Always verify specifications like voltage, current, and switching speed for compatibility in specific applications.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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3. Transfert bancaire

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