FF200R17KE4

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FF200R17KE4

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Spécifications

Mounting Style Screw Mount
Package / Case 62 mm
Technology Si
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Packaging Tray
Brand Infineon Technologies
Product Type IGBT Modules
Subcategory IGBTs
Configuration Dual
Series Trenchstop IGBT4 - E4
Product IGBT Modules
Factory Pack Quantity:Factory Pack Quantity 10
Part # Aliases SP000713374 FF200R17KE4HOSA1
Unit Weight 12 oz
Collector- Emitter Voltage VCEO Max 1.7 kV
Continuous Collector Current at 25 C 310 A
Maximum Gate Emitter Voltage 20 V
Tradename TRENCHSTOP
Collector-Emitter Saturation Voltage 1.95 V
Gate-Emitter Leakage Current 100 nA
Pd - Power Dissipation 1.25 kW

Vue d'ensemble

Description

The FF200R17KE4 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Technologies, designed for high-efficiency power electronic applications. It features a current rating of 200 A and a voltage rating of 1700 V, making it suitable for medium to high power applications such as inverters, converters, and motor drives.
Key characteristics include low switching and conduction losses, which enhance thermal performance and efficiency in power conversion systems. The module typically employs a robust, insulated package that ensures performance reliability under varying operating conditions.
Designed for easy integration, the FF200R17KE4 supports a wide range of applications in renewable energy systems, industrial automation, and electric vehicles. Its design allows for effective heat dissipation, contributing to longer operational life and lower maintenance costs.
Overall, the FF200R17KE4 is ideal for engineers seeking a reliable and efficient solution for their power electronics needs.

Features

The FF200R17KE4 is a power MOSFET from Infineon Technologies, designed for high efficiency in power conversion applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DSS) of 1700V, making it suitable for high-voltage applications.

2. Current Rating: The device can handle continuous drain current (I_D) of up to 200A, allowing for significant power handling capabilities.
3. Low On-Resistance: With a typical R_DS(on) of about 0.14 ohms, it minimizes conduction losses, enhancing efficiency.
4. Fast Switching: The MOSFET is designed for fast switching speeds, which is beneficial in applications such as inverters and converters.
5. Thermal Characteristics: It has a low thermal resistance, allowing for better heat dissipation.
6. Package Type: The device is housed in a DPAK package, which provides ease of mounting and good thermal performance.
Overall, the FF200R17KE4 is ideal for industrial applications, renewable energy systems, and electric vehicles where efficiency and reliability are critical.

Package

The FF200R17KE4 is an IGBT (Insulated Gate Bipolar Transistor) module packaged in a 4-pin, N-TO-247 format. This package type is designed for efficient heat dissipation and easy mounting in power electronic applications.

Pinout

The FF200R17KE4 is an IGBT (Insulated Gate Bipolar Transistor) module from Infineon, specifically part of the PrimePACK series. It features a pin count of 6, which typically includes the following connections: Collector (C), Emitter (E), Gate (G), and the necessary terminals for the control circuitry.
Functionally, the FF200R17KE4 is designed for high power applications, providing efficient switching capabilities and robust performance. It is commonly used in industrial drives, renewable energy systems, and motor control applications. The module is rated for a maximum collector current of 200 A and a collector-emitter voltage of 1700 V, making it suitable for high-voltage and high-current applications while ensuring reliability and thermal management.

Manufacturer

The FF200R17KE4 is a power semiconductor device manufactured by Infineon Technologies. Infineon is a global leader in semiconductor solutions, specializing in various sectors, including automotive, industrial power control, and security. The company focuses on developing innovative products and technologies that enhance energy efficiency, safety, and connectivity in electronic systems. Founded in 1999 and headquartered in Neubiberg, Germany, Infineon operates worldwide, supplying products that are vital for modern electronics and complex systems.

Application

The FF200R17KE4 is an IGBT module commonly used in high-power applications such as industrial motor drives, renewable energy systems (like wind and solar inverters), traction systems in electric vehicles, and UPS systems. Its high efficiency and fast switching capabilities make it suitable for power converters, induction heating, and other applications requiring reliable and efficient power management.

Equivalent

The FF200R17KE4 is an IGBT module from Infineon. Equivalent products include the Mitsubishi CM400HA-24H, SEMIKRON SKM200GB123D, and Toshiba GT100F131. Ensure compatibility with specifications such as voltage, current, and thermal performance when selecting alternatives. Always verify with the manufacturer's datasheets for exact equivalence.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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