FDS8958B

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FDS8958B

MOSFET N/P-CH 30V 6.4/4.5A 8SOIC

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series PowerTrench®
ProductStatus Active
FETType N and P-Channel
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 30V
Current-ContinuousDrain(Id)@25°C 6.4A, 4.5A
RdsOn(Max)@IdVgs 26mOhm @ 6.4A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 12nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 540pF @ 15V
Power-Max 900mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Vue d'ensemble

Description

FDS8958B is a dual N-channel MOSFET designed for high-performance applications such as power management and motor control. It features a low on-resistance (R_DS(on)), which enhances efficiency by reducing power loss during operation. The device is capable of handling high current and voltage, making it suitable for various power electronics applications.
Key specifications include a maximum V_DS rating of 30V and a continuous drain current rating of up to 40A at room temperature. Its compact package design allows for ease of integration into circuit boards, while its thermal performance ensures reliable operation under demanding conditions.
FDS8958B is often used in automotive, industrial, and consumer electronics applications where efficient switching and thermal management are critical. Overall, it is a versatile component that supports the growing demand for efficient power solutions in modern electronics.

Features

The FDS8958B is a dual N-channel MOSFET designed for use in a variety of applications, including power management and load switching. Key features include:
1. Low On-Resistance: Provides efficient performance with a low R_DS(on) value, enhancing power efficiency.
2. High Current Capability: Supports high continuous drain current, suitable for demanding applications.
3. Low Gate Charge: Features a low gate charge (Q_g), facilitating faster switching speeds and reducing driver power consumption.
4. Thermal Performance: Designed with a compact package that aids in effective thermal management.
5. Wide Voltage Range: Operates within a broad range of drain-source voltages, making it versatile for various designs.
6. High Reliability: Built to ensure durability and reliability in various operating environments.
7. RoHS Compliant: Meets environmental standards, appealing for environmentally-conscious designs.
These features make the FDS8958B suitable for applications in computing, telecommunications, and consumer electronics.

Package

The FDS8958B is typically available in a SO-8 (Small Outline) package type. This compact package is designed for surface mounting, making it suitable for space-constrained applications in electronic circuits.

Pinout

The FDS8958B is a dual N-channel MOSFET in a compact 8-pin SOIC package. It features a pin count of 8. The primary functions of the pins are as follows:
1. Gate (G): Controls the MOSFET operation; applies voltage to turn it on/off.
2. Source (S): Connects to the ground or lower potential side in the circuit.
3. Drain (D): Connects to the load or higher potential side; conducts current when the gate is activated.
4. Body Diode: Integrated with the MOSFET, allows reverse current flow when the MOSFET is off.
The specific pin configuration includes two sets of gate, source, and drain connections for each MOSFET, making it suitable for high-efficiency switching applications, such as in power management and DC-DC converters.

Manufacturer

The FDS8958B is manufactured by ON Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. ON Semiconductor specializes in providing a wide range of semiconductor solutions, including analog, power management, and discrete devices. The company serves various industries, including automotive, communications, computing, consumer electronics, and industrial applications. They focus on energy-efficient technologies and aim to deliver innovative solutions that help customers design and build smarter, more efficient systems.

Application

The FDS8958B is a dual N-channel MOSFET designed for power management applications. Its primary application areas include power supply circuits, DC-DC converters, battery management systems, and load switching in portable devices. It is suitable for high-efficiency power conversion and thermal management in consumer electronics, computing, and automotive systems, where space-saving and low on-resistance are critical.

Equivalent

Equivalent products to the FDS8958B chip include the FDS8959B, FDS8957B, and other similar MOSFETs from manufacturers like Vishay, Fairchild, and ON Semiconductor. Always check the specific datasheets for comparable specifications like RDS(on), VGS ratings, and package types to ensure compatibility for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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