FDS8896

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FDS8896

POWER FIELD-EFFECT TRANSISTOR, 1

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Spécifications

Supplier Rochester Electronics, LLC
Package Bulk
Series PowerTrench®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 15A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 6mOhm @ 15A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 67 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2525 pF @ 15 V
PowerDissipation(Max) 2.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SOIC

Vue d'ensemble

Description

FDS8896 is a dual N-channel MOSFET designed for high-efficiency power management applications. It features low on-resistance, which minimizes power loss and enhances thermal performance. The device is typically used in DC-DC converters, motor drivers, and power distribution applications, where efficient switching is crucial.
Key specifications include a maximum drain-source voltage and a low gate threshold voltage, allowing it to operate effectively in a variety of circuits. The FDS8896 is packaged in a compact surface-mount configuration, making it suitable for space-constrained designs.
Its low gate charge and fast switching speeds contribute to improved overall system efficiency, making it a popular choice among engineers looking to optimize power solutions. Overall, the FDS8896 serves as a reliable component in modern electronic designs, promoting energy efficiency and compactness.

Features

The FDS8896 is a dual N-channel MOSFET designed for use in power management applications. Key features include:
1. High Efficiency: Low on-resistance (R_DS(on)) values, which minimize conduction losses and improve overall efficiency.
2. Compact Package: Available in a small SO-8 package, making it suitable for space-constrained applications.
3. Fast Switching Speed: Optimized for quick turn-on and turn-off times, facilitating efficient operation in switching applications.
4. Thermal Performance: Enhanced thermal performance ensures reliable operation under high-load conditions.
5. High Voltage Rating: Capable of handling high voltage levels, making it suitable for various applications including DC-DC converters.
6. Low Gate Drive Requirements: Simplifies driving circuitry, reducing complexity in design.
These features make the FDS8896 ideal for use in power supplies, battery management systems, and various other electronic circuits requiring efficient power switching solutions.

Package

The FDS8896 is typically available in a 5mm x 6mm, 32-lead QFN (Quad Flat No-lead) package. This type of packaging provides a compact footprint and efficient thermal performance, making it suitable for various applications in power management and switching.

Pinout

The FDS8896 is a dual N-channel MOSFET in a compact surface mount package, specifically a SO-8. It features a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Drain 1 (D1): The drain terminal for the first N-channel MOSFET.
3. Source 1 (S1): The source terminal for the first N-channel MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Drain 2 (D2): The drain terminal for the second N-channel MOSFET.
6. Source 2 (S2): The source terminal for the second N-channel MOSFET.
7. Drain Connection (D): Common drain point for both MOSFETs.
8. Source Connection (S): Common source point for both MOSFETs.
The FDS8896 is commonly used for power management applications, including load switching and battery management, due to its low on-resistance and fast switching capabilities.

Manufacturer

The FDS8896 is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor after its acquisition in 2016. Fairchild Semiconductor was known for its expertise in power management, analog, and mixed-signal devices. The company focused on semiconductor solutions, particularly in the fields of power management, automotive, and industrial applications. ON Semiconductor continues to develop and produce a wide range of semiconductor components, including MOSFETs, analog and power management devices, and sensors, serving various industries such as automotive, communications, computing, and consumer electronics.

Application

The FDS8896 is a dual N-channel MOSFET driver used in various applications, including power management in DC-DC converters, motor drivers, battery management systems, and load switching. Its high-speed switching capabilities make it suitable for efficient control in telecom, automotive, and industrial power supplies. Additionally, it is utilized in portable devices for improved energy efficiency.

Equivalent

The FDS8896 chip, a dual N-channel MOSFET, can have equivalent products from various manufacturers. Notable alternatives include the NFD8896 from ON Semiconductor, BSS138 from Vishay, and STB10NM60 from STMicroelectronics. Ensure to compare specifications such as voltage ratings, current handling, and package type for compatibility in your specific application.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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