FDS6680A

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FDS6680A

MOSFET N-CH 30V 12.5A 8SOIC

  • Fabricant
  • Mfr. Partie #FDS6680A
  • Paquet SOIC-8
  • Fiche de données
  • En stock7399

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 12.5A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 9.5mOhm @ 12.5A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 23 nC @ 5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1620 pF @ 15 V
PowerDissipation(Max) 2.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SOIC

Vue d'ensemble

Description

FDS6680A is a high-performance N-channel MOSFET designed for various applications, including power management and switching. It features low on-resistance, high-speed switching capabilities, and a compact package, making it suitable for consumer electronics, industrial applications, and automotive systems. The device is characterized by its ability to handle high currents and voltages efficiently, contributing to reduced power loss and improved thermal performance. Its gate threshold voltage allows for easy integration into different circuit designs, ensuring optimal performance in power supply circuits and other electronic applications.

Features

The FDS6680A is a dual N-channel MOSFET designed for various applications, including power management and switching in electronic devices. Key features include:
1. Low On-Resistance (RDS(on)): Provides efficient conduction with minimal power loss.
2. High-Voltage Rating: Typically supports up to 30V, making it suitable for a range of power applications.
3. Fast Switching Speeds: Allows for quick transitions between on and off states, enhancing overall circuit performance.
4. Compact Package: Available in a SO-8 package, facilitating space-saving designs in PCB layouts.
5. Thermal Resistance: Designed to manage heat dissipation effectively, ensuring reliability under load conditions.
6. Low Gate Charge (Qg): Minimizes the energy required to switch the device on and off, improving efficiency in high-frequency applications.
These features make the FDS6680A ideal for use in DC-DC converters, motor drivers, and other power management circuits.

Package

The FDS6680A is typically packaged in a SO-8 (Small Outline 8-lead) surface mount package. This compact design is suitable for various applications in power management and switching.

Pinout

The FDS6680A is a dual N-channel MOSFET housed in a SO-8 package. It has a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Source 1 (S1) - Source terminal for the first MOSFET.
3. Drain 1 (D1) - Drain terminal for the first MOSFET.
4. Drain 2 (D2) - Drain terminal for the second MOSFET.
5. Source 2 (S2) - Source terminal for the second MOSFET.
6. Gate 2 (G2) - Controls the second N-channel MOSFET.
7. Unused / No Connect (NC) - Not connected to any internal components.
8. Unused / No Connect (NC) - Not connected to any internal components.
This device is commonly used in power management applications, including high-speed switching and load driving.

Manufacturer

The FDS6680A is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor was known for its expertise in analog and mixed-signal semiconductors, power management solutions, and a wide range of discrete devices including MOSFETs, which the FDS6680A is part of. The company focused on providing innovative semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. ON Semiconductor continues this legacy, offering a diverse portfolio of products aimed at enhancing energy efficiency and performance across multiple sectors.

Application

The FDS6680A is a dual N-channel MOSFET commonly used in power management applications, including DC-DC converters, synchronous rectification, and power supply circuits. It is suitable for battery management systems, motor drives, and load switching in consumer electronics. Its low on-resistance and fast switching capabilities enhance efficiency in compact designs, making it ideal for applications in mobile devices, laptops, and automotive systems.

Equivalent

The FDS6680A is a dual N-channel MOSFET. Equivalent products include the IRF3205, AO3400, and BSS138. Always check specific electrical characteristics and package compatibility when substituting components.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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