FDS6679AZ

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FDS6679AZ

POWER FIELD-EFFECT TRANSISTOR, 1

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Spécifications

Package Bulk
Series PowerTrench®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 13A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 9.3mOhm @ 13A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 96 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 3845 pF @ 15 V
PowerDissipation(Max) 2.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SOIC

Vue d'ensemble

Description

The FDS6679AZ is a dual N-channel MOSFET designed for high-efficiency power management applications. It features low on-resistance and fast switching capabilities, which make it suitable for various applications, including DC-DC converters, power supplies, and motor control. With a maximum continuous drain current rating and a broad range of gate threshold voltages, the FDS6679AZ can effectively handle significant load demands while minimizing power loss. It is particularly valued for its thermal performance, allowing for effective heat dissipation in compact designs. The device typically comes in a compact package, making it ideal for space-constrained environments. Overall, the FDS6679AZ is a reliable choice for engineers seeking efficient and compact solutions in power management systems.

Features

The FDS6679AZ is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Low R_DS(on): It offers a low drain-source on-resistance, which enhances efficiency by reducing conduction losses.
2. High Speed: Suitable for fast switching applications, making it ideal for DC-DC converters and power supplies.
3. Thermal Performance: Equipped with a robust thermal resistance profile, it can handle significant power dissipation.
4. Gate-Source Voltage Range: Compatible with a wide range of gate-source voltages for versatile use in various circuits.
5. Compact Package: Available in a compact surface-mount package (SO-8), facilitating space-saving designs.
6. High Reliability: Designed for high reliability in industrial and consumer applications.
These features make the FDS6679AZ suitable for a variety of applications, including motor control, load switching, and battery management systems.

Package

The FDS6679AZ is packaged in a SO-8 (Small Outline) package type, which is a surface-mount configuration commonly used for integrated circuits and MOSFETs.

Pinout

The FDS6679AZ is a dual N-channel MOSFET used primarily for power management applications. It has a total of 8 pins. The pin configuration is as follows:
1. Gate1 (G1): Controls the first N-channel MOSFET.
2. Drain1 (D1): Drain terminal for the first N-channel MOSFET.
3. Source1 (S1): Source terminal for the first N-channel MOSFET.
4. Gate2 (G2): Controls the second N-channel MOSFET.
5. Drain2 (D2): Drain terminal for the second N-channel MOSFET.
6. Source2 (S2): Source terminal for the second N-channel MOSFET.
7. Source1 (S1): Common source connection for the first MOSFET.
8. Source2 (S2): Common source connection for the second MOSFET.
The device is designed for applications that require efficient switching characteristics, such as power converters and load switches. It features low R_DS(on) values for enhanced performance.

Manufacturer

The FDS6679AZ is manufactured by FDS (Fairchild Semiconductor), which is now a part of ON Semiconductor. Fairchild Semiconductor was a prominent company specializing in the design and manufacturing of semiconductor products, including power MOSFETs, linear devices, and other integrated circuits. The company was known for its innovative solutions in the semiconductor industry, catering to various markets such as automotive, industrial, consumer electronics, and telecommunications. ON Semiconductor, which acquired Fairchild in 2016, continues to develop and produce a wide range of semiconductor solutions, focusing on energy-efficient products and technologies for a sustainable future.

Application

The FDS6679AZ is a dual N-channel MOSFET primarily used in power management applications. Its key application areas include DC-DC converters, load switching, motor control, and power supply circuits. The device is suitable for use in consumer electronics, industrial equipment, and automotive systems, where efficient power conversion and thermal management are essential.

Equivalent

The FDS6679AZ is a dual N-channel MOSFET. Equivalent products include the Si4910DY, BSS138, and BSS123. Ensure to check the specific datasheets for voltage, current ratings, and package types to confirm compatibility based on your application requirements.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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