FDS6673BZ

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FDS6673BZ

MOSFET P-CH 30V 14.5A 8SOIC

  • Fabricant
  • Mfr. Partie #FDS6673BZ
  • Paquet SOP8
  • Fiche de données
  • En stock7096

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series PowerTrench®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 14.5A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 7.8mOhm @ 14.5A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 124 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 4700 pF @ 15 V
PowerDissipation(Max) 2.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SOIC

Vue d'ensemble

Description

FDS6673BZ is a dual N-channel MOSFET designed for efficient power management applications. It features low on-resistance, which minimizes power loss and enhances thermal performance, making it suitable for various applications such as DC-DC converters, power supplies, and motor control. The device typically supports a wide operating voltage range, ensuring versatility in different circuits. Its compact package design allows for space-saving implementations in electronic devices. The FDS6673BZ is characterized by high-speed switching capabilities, which contribute to improved efficiency and reduced electromagnetic interference (EMI). Overall, it is an ideal choice for designers seeking reliable performance in power electronic systems.

Features

The FDS6673BZ is a N-channel MOSFET designed for a variety of power management applications. Key features include:
1. Low On-Resistance: Offers a low R_DS(on) value, which reduces conduction losses and improves efficiency.
2. High Current Rating: Capable of handling high continuous drain current, making it suitable for demanding applications.
3. Fast Switching Speed: Designed for quick switching, enhancing performance in high-frequency applications.
4. Low Gate Charge: Minimizes drive power requirements, making it efficient for use in power supply circuits.
5. Thermal Performance: Features a robust thermal package, facilitating effective heat dissipation.
6. Voltage Ratings: Operates at high breakdown voltages, ensuring reliability in various conditions.
7. Applications: Ideal for applications in DC-DC converters, motor drives, and power management systems.
This combination of features makes the FDS6673BZ a versatile choice for modern electronic designs.

Package

The FDS6673BZ is packaged in a PowerSO-8 package type. This surface-mount package is designed for efficient thermal performance and space-saving in electronic applications.

Pinout

The FDS6673BZ is a dual N-channel MOSFET packaged in a SO-8 configuration. It has a total of 8 pins. The functions of the pins are as follows:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Source 1 (S1): The source terminal for the first N-channel MOSFET.
3. Drain 1 (D1): The drain terminal for the first N-channel MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Source 2 (S2): The source terminal for the second N-channel MOSFET.
6. Drain 2 (D2): The drain terminal for the second N-channel MOSFET.
7. Drain 1 (D1): Shared pin for Drain of the first MOSFET.
8. Source 2 (S2): Shared pin for Source of the second MOSFET.
The FDS6673BZ is typically used in applications such as power management and load switching.

Manufacturer

The FDS6673BZ is manufactured by ON Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. ON Semiconductor specializes in advanced semiconductor solutions, offering a wide range of products including power management, analog, logic, and wireless components. The company focuses on providing innovative technologies for applications in automotive, industrial, communications, and consumer markets. With a commitment to sustainability and efficiency, ON Semiconductor aims to enable energy-efficient designs and support the growing demand for smart devices and IoT solutions.

Application

The FDS6673BZ is a dual N-channel MOSFET suitable for various applications, including power management in DC-DC converters, load switching, and motor control. It is commonly used in computing, consumer electronics, and automotive systems, providing efficient power handling, low RDS(on), and fast switching capabilities. Additionally, it can be employed in battery management systems and industrial applications where compact size and thermal performance are crucial.

Equivalent

The FDS6673BZ is a dual N-channel MOSFET. Equivalent products include the FDS6673B, BSS138, and AO3400. Always check the specific datasheets for electrical characteristics and package compatibility to ensure suitability for your application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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