FDS4435BZ

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FDS4435BZ

MOSFET P-CH 30V 8.8A 8SOIC

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series PowerTrench®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 8.8A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 20mOhm @ 8.8A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 40 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 1845 pF @ 15 V
PowerDissipation(Max) 2.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SOIC

Vue d'ensemble

Description

FDS4435BZ is a specific model of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in electronic circuits. It features a low on-resistance, making it suitable for high-efficiency applications such as power management, DC-DC converters, and motor control. The device typically operates at a high voltage and can handle significant current, which is beneficial in power conversion tasks.
Key specifications often include parameters like gate threshold voltage, maximum drain-source voltage, and continuous drain current capacity. The FDS4435BZ is packaged in a compact format, making it ideal for space-constrained designs. Its fast switching capabilities enhance performance in fast-paced electronic applications.
Engineers choose this MOSFET for its reliability, efficiency, and versatility in various electronic systems, from consumer electronics to industrial applications.

Features

The FDS4435BZ is a N-channel MOSFET designed for high efficiency and performance in various applications. Key features include:
1. Low RDS(on): It has a low on-resistance, allowing for reduced conduction losses and improved efficiency.
2. High Voltage Rating: Typically rated for a maximum drain-source voltage (VDS) of 30V, suitable for various power management applications.
3. High Current Capability: Capable of handling significant drain current, making it ideal for power switching applications.
4. Fast Switching Speed: Designed for quick turn-on and turn-off times, enhancing overall circuit performance.
5. Thermal Performance: Offers good thermal characteristics, ensuring reliable operation at elevated temperatures.
6. Package Type: Available in a compact SO-8 package, facilitating space-saving designs in electronic circuits.
These features make the FDS4435BZ suitable for applications in power supplies, DC-DC converters, and motor drives, where efficiency and compact size are crucial.

Package

The FDS4435BZ is available in a SO-8 (Small Outline 8) package type. This package is commonly used for surface-mounted devices and is characterized by its compact size, making it suitable for space-constrained applications.

Pinout

The FDS4435BZ is a dual N-channel MOSFET housed in a 8-pin SO-8 package. It features a pin count of 8, with the following primary functions:
1. G1 (Gate 1): Controls the first N-channel MOSFET.
2. D1 (Drain 1): Drain terminal for the first MOSFET.
3. S1 (Source 1): Source terminal for the first MOSFET.
4. G2 (Gate 2): Controls the second N-channel MOSFET.
5. D2 (Drain 2): Drain terminal for the second MOSFET.
6. S2 (Source 2): Source terminal for the second MOSFET.
7. D (Common Drain/Source): This pin can be used for common connections in specific configurations.
8. N/C (No Connection): Not internally connected; can be left floating.
The FDS4435BZ is commonly used in applications requiring efficient switching and power management, such as in DC-DC converters and power supply circuits.

Manufacturer

The FDS4435BZ is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor was known for its expertise in the design and production of semiconductor solutions, including power management, analog, and discrete devices. The company specialized in providing innovative and high-performance components for various applications, including consumer electronics, automotive, and industrial sectors. ON Semiconductor, which acquired Fairchild in 2016, continues to focus on energy-efficient solutions and is a leading provider of semiconductor technologies, emphasizing sustainability and IoT (Internet of Things) applications.

Application

The FDS4435BZ is a dual N-channel MOSFET primarily used in power management applications, including synchronous rectification, DC-DC converters, and load switching. It is suitable for use in battery management systems, power supplies, and automotive applications due to its low on-resistance and fast switching capabilities. Additionally, it can be utilized in general-purpose switching applications in consumer electronics and industrial systems.

Equivalent

The FDS4435BZ is a dual N-channel MOSFET. Equivalent products include the FDS4435AZ, SiHFD118, and IRLZ44N. Always verify specifications like voltage ratings, R_DS(on), and package types when considering alternatives.

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UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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