FDS4435

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FDS4435

MOSFET P-CH 30V 8.8A 8SOIC

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  • Mfr. Partie #FDS4435
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Spécifications

Series PowerTrench®
Part Status Obsolete
Base Product Number FDS44
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 8.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 5 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1604 pF @ 15 V
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package 8-SOIC (0.154", 3.90mm Width)
Packaging Tape & Reel (TR)

Vue d'ensemble

Description

FDS4435 is a course that typically focuses on advanced topics related to food science and technology, emphasizing the principles of food safety, preservation, and quality control. It may cover areas such as microbial safety, food chemistry, and the impact of processing techniques on food products. Students engage in both theoretical and practical learning, often involving laboratory work to analyze food components and safety protocols.
The course is designed for those pursuing careers in food industry sectors, including quality assurance, product development, and regulatory affairs. By the end of the course, students are expected to have a comprehensive understanding of the critical factors that influence food safety and quality, equipping them with the skills needed for effective food management and innovation.

Features

The FDS4435 is a N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (V_DSS) of 30V, suitable for various applications.
2. Current Rating: Offers a continuous drain current (I_D) of 49A, allowing for substantial load handling.
3. On-Resistance: Low on-resistance (R_DS(on)) minimizes conduction losses, improving efficiency in power management.
4. Fast Switching: Designed for rapid switching capabilities, reducing transition losses and improving overall performance in high-frequency applications.
5. Thermal Performance: Equipped with a low thermal resistance, enhancing its ability to manage heat during operation.
6. Package Type: Available in a TO-220 or similar package, facilitating easy integration into electronic designs.
These features make the FDS4435 suitable for applications like power management, motor control, and DC-DC converters.

Package

The FDS4435 is typically packaged in a surface mount format, specifically the SO-8 package type. This compact packaging enables efficient thermal performance and space-saving on printed circuit boards.

Pinout

The FDS4435 is a dual N-channel MOSFET housed in a TO-220 package with 5 pins. The pin configuration is as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Source 1 (S1) - Source terminal for the first MOSFET.
3. Drain 1 (D1) - Drain terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Source 2 (S2) - Source terminal for the second MOSFET, which is typically connected to the same potential as S1.
The FDS4435 is designed for high-speed switching applications and can handle maximum continuous currents and voltages, making it suitable for power management and conversion tasks in various electronic circuits. Its low on-resistance contributes to efficient operation and minimal power loss.

Manufacturer

The FDS4435 is manufactured by Fairchild Semiconductor, which is a subsidiary of ON Semiconductor. Fairchild Semiconductor is known for designing and manufacturing a wide range of semiconductor solutions, including power management, analog, and high-frequency devices. The company primarily serves markets such as automotive, industrial, consumer, and communications. Established in 1957, Fairchild was one of the pioneers in the semiconductor industry, contributing significantly to the development of modern electronics. ON Semiconductor, the parent company, focuses on energy-efficient innovations and provides a broad portfolio of semiconductor solutions to support diverse applications.

Application

The FDS4435 is a dual N-channel MOSFET commonly used in various applications, including power management, DC-DC converters, load switching, and motor control. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power supplies, battery management systems, and portable devices. Additionally, it can be utilized in automotive applications, LED drivers, and other electronic circuits requiring efficient power handling.

Equivalent

The FDS4435 is a N-channel MOSFET. Equivalent products include the FDS4435C, BSS138, and IRF760. For specific applications, other alternatives might be the SI4460 or the AO3400, depending on voltage and current requirements. Always verify specifications such as threshold voltage, Rds(on), and package type before substitution.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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