FDP51N25

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FDP51N25

MOSFET N-CH 250V 51A TO220-3

  • Fabricant
  • Mfr. Partie #FDP51N25
  • Paquet TO-220-3
  • Fiche de données
  • En stock5954

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Spécifications

Package Bulk,Tube
Series UniFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 250 V
Current-ContinuousDrain(Id)@25°C 51A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 60mOhm @ 25.5A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 70 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 3410 pF @ 25 V
PowerDissipation(Max) 320W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220-3

Vue d'ensemble

Description

The FDP51N25 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a maximum drain-source voltage of 250V and a continuous drain current rating of 51A, making it suitable for use in power management systems, DC-DC converters, and motor drives.
Key specifications include a low gate threshold voltage and a low on-resistance (R_DS(on)), which reduce power loss during operation. The device typically has a fast switching speed, which enhances performance in high-frequency applications.
The FDP51N25 is housed in a TO-220 package, providing effective thermal dissipation, essential for maintaining performance under load. Its robustness and efficiency make it a popular choice among engineers for designing reliable and compact power electronics solutions.

Features

The FDP51N25 is an N-channel power MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 250V, making it suitable for high-voltage applications.
2. Current Handling: It has a continuous drain current (I_D) rating of 51A, allowing it to handle substantial loads.
3. Low R_DS(on): The on-resistance value is typically low (around 0.075 Ohms), which enhances efficiency by reducing conduction losses.
4. Fast Switching: The device supports rapid switching times, which is beneficial for high-frequency applications.
5. Thermal Performance: It comes in a TO-220 package, offering effective heat dissipation capabilities.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling compatibility with standard logic levels.
These features make the FDP51N25 ideal for use in power supply circuits, motor drives, and other applications requiring efficient power management.

Package

The FDP51N25 is typically packaged in a TO-220 format. This package type is designed for high-power applications, offering good thermal performance and allows for easy heat dissipation.

Pinout

The FDP51N25 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied here turns the device on or off.
2. Drain (D): This is where the current flows out of the MOSFET when it is in the on state.
3. Source (S): This pin is connected to the ground or the negative side of the circuit; current flows into the Source when the device is on.
The FDP51N25 is commonly used in power applications due to its low on-resistance and high current handling capabilities, making it suitable for switching and amplification tasks in various electronic circuits.

Manufacturer

The FDP51N25 is manufactured by Fairchild Semiconductor, a company known for its production of semiconductor technologies. Fairchild specializes in a wide range of electronic components, including power MOSFETs, diodes, and other power management devices. Founded in 1957, Fairchild played a significant role in the development of the semiconductor industry and is recognized for its innovation in integrated circuits and discrete components. In 2016, Fairchild was acquired by ON Semiconductor, a larger semiconductor manufacturer that continues to offer Fairchild's product lines, including the FDP51N25, which is a N-channel MOSFET used in various applications such as power supplies, motor control, and automotive electronics.

Application

The FDP51N25 is a N-channel MOSFET primarily used in power management applications. Its application areas include switch-mode power supplies, DC-DC converters, motor drivers, and power inverters. It is suitable for high-efficiency designs due to its low on-resistance and fast switching capabilities, making it ideal for automotive, industrial, and consumer electronics applications.

Equivalent

The FDP51N25 is an N-channel MOSFET. Equivalent products include the IRF510, IRF520, and STP16NF06. Check specifications for voltage and current ratings to ensure compatibility. Always verify with the manufacturer's datasheets to confirm equivalency in your specific application.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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