FDN358P

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FDN358P

SMALL SIGNAL FIELD-EFFECT TRANSI

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Spécifications

Package Bulk
Series PowerTrench®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 1.5A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 125mOhm @ 1.5A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 5.6 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 182 pF @ 15 V
PowerDissipation(Max) 500mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SuperSOT-3

Vue d'ensemble

Description

FDN358P is a course designed to provide students with a comprehensive understanding of foundational concepts in a specific field, typically focusing on advanced topics within health, nutrition, or related disciplines. The course emphasizes the integration of theoretical knowledge with practical applications, fostering critical thinking and problem-solving skills. Students engage in hands-on activities, case studies, and collaborative projects to enhance their learning experience.
Key components include in-depth analysis of current research, exploration of innovative practices, and discussions on ethical considerations in the field. By the end of the course, participants are expected to demonstrate a robust understanding of the subject matter, enabling them to apply their knowledge in real-world scenarios effectively. This prepares students for further academic pursuits or professional opportunities in their chosen domain.

Features

The FDN358P is a P-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: It typically handles a maximum drain-source voltage (V_DS) of around -30V.
2. Current Rating: The maximum continuous drain current (I_D) is approximately -2.5A.
3. Low On-Resistance: It features a low on-resistance (R_DS(on)), which minimizes power loss during operation.
4. Fast Switching Speed: Suitable for high-frequency applications due to its quick switching capabilities.
5. Thermal Resistance: It has good thermal performance, allowing for efficient heat dissipation.
6. Package Type: Commonly available in surface-mount packages, facilitating compact designs.
7. Applications: Ideal for use in power management, load switching, and battery-operated devices.
These attributes make the FDN358P a versatile choice for various electronic applications, particularly in power regulation and control circuits.

Package

The FDN358P is typically packaged in a Surface-Mount Device (SMD) package, specifically in a SOT-23-6 configuration. This packaging allows for compact designs and efficient use of board space in electronic applications.

Pinout

The FDN358P is a dual N-channel MOSFET with a total of 8 pins. Its pin configuration typically includes:
1. Gate (G) - Controls the MOSFET operation.
2. Source (S) - The terminal through which carriers enter the device.
3. Drain (D) - The terminal through which carriers leave the device.
4. Gate (G) - For the second MOSFET in the package.
5. Source (S) - Second MOSFET source.
6. Drain (D) - Second MOSFET drain.
7. Drain (D) - Common drain for both MOSFETs.
8. Source (S) - Common source for both MOSFETs.
The FDN358P is designed for applications such as power management, signal switching, and other electronic control systems, offering features like low on-resistance and high speed.

Manufacturer

The FDN358P is manufactured by ON Semiconductor, a prominent semiconductor company based in the United States. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including transistors, diodes, analog ICs, and power management solutions. The company serves various industries, such as automotive, industrial, communications, consumer electronics, and computing. Established in 1999, ON Semiconductor has grown through a combination of organic growth and strategic acquisitions, positioning itself as a key player in the semiconductor market. Its focus on energy-efficient products and innovative technologies aligns with the growing demand for sustainable and high-performance electronic solutions.

Application

FDN358P is commonly used in applications such as power management, LED drivers, battery management systems, and consumer electronics. Its characteristics make it suitable for voltage regulation and switching applications, providing efficient performance in mobile devices, automotive systems, and industrial equipment.

Equivalent

The FDN358P is a quad operational amplifier commonly used in various applications. Equivalent products include the LM358, TLV2374, and MCP6004, which offer similar functionality and configuration. Always check the specific parameters such as voltage, frequency, and power supply requirements to ensure compatibility with your design.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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