FDN339AN

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FDN339AN

SMALL SIGNAL FIELD-EFFECT TRANSI

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Spécifications

Package Bulk
Series PowerTrench®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 3A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 4.5V
RdsOn(Max)@IdVgs 35mOhm @ 3A, 4.5V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 10 nC @ 4.5 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 700 pF @ 10 V
PowerDissipation(Max) 500mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3

Vue d'ensemble

Description

FDN339AN is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in various electronic applications, including power management, switching, and amplification circuits. It features low on-resistance, which minimizes power loss and enhances efficiency. The device is designed to handle high current and voltage levels, making it suitable for automotive, industrial, and consumer electronic applications.
Key specifications typically include a maximum drain-source voltage (V_DS) around 30V, a continuous drain current (I_D) that can exceed 30A, and a low gate threshold voltage, ensuring compatibility with low-voltage control signals. The FDN339AN is packaged in a compact surface-mount format, facilitating easy integration into modern circuit designs.
Overall, the FDN339AN is valued for its reliability, robustness, and versatility in various electronic systems, contributing to improved performance and efficiency in power-related applications.

Features

The FDN339AN is a dual N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Low On-Resistance: This MOSFET offers a low R_DS(on), which enhances efficiency and reduces power loss during operation.
2. High-Speed Switching: It is capable of fast switching, making it suitable for high-frequency applications.
3. High Voltage Rating: The device typically supports a voltage range of up to 30V, accommodating various power supply requirements.
4. Compact Package: The FDN339AN is available in a small footprint, which is ideal for space-constrained designs.
5. Thermal Stability: It has good thermal characteristics, allowing it to operate reliably at elevated temperatures.
6. Low Gate Charge: This feature reduces the drive power required, facilitating easier integration into circuits.
Overall, the FDN339AN is well-suited for applications in power management, load switching, and motor control due to its efficiency and compact design.

Package

The FDN339AN is typically packaged in a SOT-23 package type, which is a small, surface-mount package commonly used for transistors and other electronic components.

Pinout

The FDN339AN is a complementary MOSFET (CMOS) in a standard TO-220 package, typically used for power switching applications. It features a total of 3 pins:
1. Gate (G) - This pin controls the transistor's switching function. A voltage applied to this pin allows current to flow between the drain and source.
2. Drain (D) - This pin is connected to the load. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S) - This pin is connected to the ground or the negative side of the circuit. It completes the circuit for the current flowing through the load.
In summary, the FDN339AN has 3 pins (Gate, Drain, Source) and is used primarily for switching applications in electronic circuits.

Manufacturer

The FDN339AN is manufactured by ON Semiconductor, a company known for its semiconductor solutions. ON Semiconductor designs, manufactures, and sells a wide range of semiconductor products, including power management, analog, and digital components. The company serves various industries such as automotive, industrial, communications, and consumer electronics. Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor focuses on energy-efficient technologies and aims to provide innovative solutions that enhance the performance of their customers’ products. Their extensive product portfolio supports various applications, making them a significant player in the semiconductor industry.

Application

FDN339AN is a N-channel MOSFET commonly used in switching applications, power management, and amplification. It is suitable for use in power supplies, motor drivers, and audio amplifiers. Additionally, it can be utilized in electronic circuits requiring efficient signal amplification and low on-resistance for enhanced performance in consumer electronics, automotive systems, and industrial applications.

Equivalent

The FDN339AN is a dual N-channel MOSFET. Equivalent products include BSS138, BSS84, and BS170. Additionally, you may consider alternatives like 2N7000 or 2N7002 for similar applications, depending on your specific requirements for voltage and current ratings. Always verify specifications before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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