FDN336P

Les images sont à titre de référence seulement

FDN336P

MOSFET P-CH 20V 1.3A SUPERSOT3

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Supplier onsemi,Rochester Electronics, LLC
Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series PowerTrench®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 1.3A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 4.5V
RdsOn(Max)@IdVgs 200mOhm @ 1.3A, 4.5V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 5 nC @ 4.5 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 330 pF @ 10 V
PowerDissipation(Max) 500mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3

Vue d'ensemble

Description

FDN336P is a course designed to provide students with a comprehensive understanding of foundational concepts in the field of digital communication and networking. The curriculum typically covers key topics such as data transmission principles, networking protocols, and the architecture of communication systems. Students will learn about both theoretical frameworks and practical applications, gaining insights into how digital networks operate and how data is effectively communicated across various platforms.
The course may also explore emerging technologies, cybersecurity measures, and the impact of digital communication on society. By the end of FDN336P, students are expected to develop critical thinking skills related to digital networking challenges and solutions, preparing them for advanced studies or careers in technology fields. Overall, FDN336P serves as an essential entry point for those interested in the dynamics of digital communication and networking.

Features

The FDN336P is a compact, high-performance N-channel MOSFET primarily designed for switching applications. Key features include:
1. Voltage Rating: Typically supports high voltage, often around 30V.
2. Current Handling: Capable of handling continuous drain currents up to approximately 30A.
3. Low On-Resistance: Provides low R_DS(on) values, minimizing power loss during operation.
4. Fast Switching Speed: Ideal for applications requiring quick turn-on and turn-off characteristics.
5. Thermal Performance: Equipped with a robust package for efficient heat dissipation.
6. Gate Threshold Voltage: Operates effectively at lower gate voltages, enhancing compatibility with various control circuits.
7. Applications: Commonly used in power management, motor control, and switching power supplies.
These features make the FDN336P suitable for a wide range of electronic applications, providing efficiency and reliability.

Package

The FDN336P is typically packaged in a SOT-23 or similar small surface-mount package. This compact design is suitable for space-constrained applications in electronic circuits.

Pinout

The FDN336P is a P-channel MOSFET commonly used in electronic circuits for switching and amplifying applications. It typically comes in a 3-pin package.
The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the MOSFET. A negative voltage applied to this pin relative to the source turns the device on.
2. Source (S): This is the terminal through which current enters the MOSFET. In a P-channel device, the source is typically connected to a higher voltage.
3. Drain (D): This pin is where the output current flows out of the MOSFET to the load.
Each pin serves a critical role in the operation of the MOSFET, facilitating control of the electrical flow within a circuit.

Manufacturer

The FDN336P is a product manufactured by ON Semiconductor. ON Semiconductor is a multinational company that specializes in semiconductor solutions, providing a wide range of products including analog, digital, and mixed-signal semiconductors. The company serves various markets such as automotive, industrial, communications, consumer electronics, and computing. Established to focus on energy-efficient technologies, ON Semiconductor is known for its commitment to sustainability and innovation in the semiconductor industry.

Application

FDN336P is a high-performance P-channel MOSFET primarily used in power management applications. Its application areas include battery management systems, power converters, load switches, and audio amplification circuits. Additionally, it is suitable for use in switching regulators and other high-efficiency power supply designs, enabling efficient control of power flow in various electronic devices.

Equivalent

The FDN336P is a dual N-channel MOSFET typically used for power management applications. Equivalent products include the BSS138, 2N7000, and BS170. Other alternatives might be FDN337P and FDN339P, which offer similar specifications in terms of voltage and current ratings. Always check the specific datasheets for compatibility.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire