FDN335N

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FDN335N

MOSFET N-CH 20V 1.7A SUPERSOT3

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 1.7A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 4.5V
RdsOn(Max)@IdVgs 70mOhm @ 1.7A, 4.5V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 5 nC @ 4.5 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 310 pF @ 10 V
PowerDissipation(Max) 500mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3

Vue d'ensemble

Description

FDN335N is typically a course associated with foundational knowledge in a specific field, often focusing on concepts relevant to a particular discipline or subject area. The course aims to introduce students to essential theories, practices, and methodologies, providing a solid groundwork for further study. Key components may include lectures, hands-on activities, and collaborative projects, fostering critical thinking and problem-solving skills.
Students can expect to engage with core content through readings, discussions, and assessments designed to deepen their understanding of the subject matter. By the end of the course, participants should have a clearer grasp of fundamental principles, enabling them to apply this knowledge in practical contexts or advanced studies.
For precise details, including objectives, prerequisites, and specific content, it’s advisable to consult the course syllabus or the institution offering FDN335N.

Features

The FDN335N is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Low R_DS(on): Ensures minimal conduction losses, leading to higher efficiency.
2. High Voltage Rating: Typically around 30V, making it suitable for various circuit applications.
3. Fast Switching Speed: Enables quick response times, beneficial for high-frequency applications.
4. Thermal Stability: Good thermal characteristics allow for reliable operation under varying load conditions.
5. Low Gate Charge (Q_G): Reduces drive power requirements, simplifying circuit design.
6. Compact Package: Often available in DPAK or TO-220 packages, which aids in space-efficient designs.
These features make the FDN335N an ideal choice for applications in power supplies, motor drives, and RF amplifiers.

Package

The FDN335N is typically available in a surface-mount package type, specifically the SOT-23 package.

Pinout

The FDN335N is a dual N-channel MOSFET commonly used in various electronic applications. It typically comes in a 6-pin package. The pin configuration is as follows:
1. Gate1 (G1): Control terminal for the first N-channel MOSFET.
2. Drain1 (D1): Output terminal for the first N-channel MOSFET.
3. Source1 (S1): Source terminal for the first N-channel MOSFET.
4. Gate2 (G2): Control terminal for the second N-channel MOSFET.
5. Drain2 (D2): Output terminal for the second N-channel MOSFET.
6. Source2 (S2): Source terminal for the second N-channel MOSFET.
The FDN335N is designed for low-voltage applications, offering enhanced efficiency and reduced on-resistance, making it suitable for power management, switching, and amplification tasks in electronic circuits. Check the datasheet for specific electrical characteristics and ratings.

Manufacturer

The FDN335N is manufactured by ON Semiconductor, a prominent global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including power management, analog, and logic devices, as well as sensors and integrated circuits. The company serves various industries, such as automotive, communications, computing, consumer electronics, and industrial applications. Founded in 1999, ON Semiconductor has grown through a series of acquisitions and is recognized for its innovation and commitment to sustainable practices.

Application

FDN335N is a MOSFET commonly used in power management applications, such as DC-DC converters, battery management systems, and power supplies. It is suitable for high-speed switching in applications like motor drivers and LED lighting. Additionally, it is utilized in consumer electronics and automotive systems for efficient power handling and thermal management.

Equivalent

The FDN335N chip is a dual N-channel MOSFET. Equivalent products include the BS170, 2N7000, and BSS138. Check specifications for different voltage and current ratings to ensure compatibility in specific applications.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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