FDN302P

Les images sont à titre de référence seulement

FDN302P

MOSFET P-CH 20V 2.4A SUPERSOT3

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series PowerTrench®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 2.4A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 4.5V
RdsOn(Max)@IdVgs 55mOhm @ 2.4A, 4.5V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 14 nC @ 4.5 V
Vgs(Max) ±12V
InputCapacitance(Ciss)(Max)@Vds 882 pF @ 10 V
PowerDissipation(Max) 500mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3

Vue d'ensemble

Description

FDN302P is a course focused on the foundational principles and applications of functional data analysis (FDA). It equips students with the skills to analyze data that are functions or curves rather than traditional scalar values. The course covers key concepts such as functional data representation, functional principal component analysis, and regression techniques tailored for functional data. Students learn to handle various types of functional data, including time series and spatial data, using statistical software. The emphasis is on both theoretical understanding and practical application, enabling students to interpret complex datasets in fields like finance, environmental science, and biomedical research. By the end of the course, participants will be proficient in leveraging FDA techniques to uncover patterns and insights from functional data.

Features

The FDN302P is a versatile, dual N-channel MOSFET designed for various applications in power management. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Handling: Rated for continuous drain current (I_D) of up to 32A, allowing for efficient operation in high-current scenarios.
3. Low On-Resistance: Offers a low R_DS(on) value, which reduces power loss and heat generation during operation.
4. Fast Switching Speed: Facilitates efficient switching in applications like DC-DC converters and motor drivers.
5. Package Type: Generally available in a TO-220 or similar package, promoting effective heat dissipation.
6. Thermal Stability: Designed to operate effectively in a range of temperatures, enhancing reliability in diverse environments.
Overall, the FDN302P is ideal for automotive, industrial, and consumer electronics applications requiring efficient power management.

Package

The FDN302P is typically packaged in a TO-92 form factor. This package type is a cylindrical plastic package commonly used for transistors and similar components, providing easy mounting and handling in electronic circuits.

Pinout

The FDN302P is a N-channel MOSFET transistor commonly used in electronic applications. It comes in a standard TO-220 package with a total of three pins.
Pin Count and Functions:
1. Gate (G) - The control terminal used to turn the MOSFET on or off. Applying voltage between the gate and source allows current to flow from the drain to the source.
2. Drain (D) - The terminal through which the main current flows when the device is on. It connects to the load.
3. Source (S) - The terminal that connects to the ground or negative side of the circuit. It is the reference point for the gate voltage.
The FDN302P is known for its low on-resistance, making it suitable for high-efficiency applications such as power switching and signal amplification.

Manufacturer

The FDN302P is manufactured by ON Semiconductor, a company that specializes in semiconductor solutions. ON Semiconductor designs and produces a wide range of electronic components, including integrated circuits, discrete semiconductors, and sensors. Their products are used in various applications across automotive, industrial, consumer, and communication sectors. Established in 1999, the company has a strong focus on energy-efficient technologies and innovations that enhance performance and reduce power consumption in electronic devices.

Application

FDN302P is a high-speed, dual N-channel MOSFET primarily used in applications such as power management, DC-DC converters, and switching power supplies. Its low on-resistance and fast switching capabilities make it suitable for use in battery management systems, LED drivers, and motor control. Additionally, it can be utilized in load switches and power distribution in consumer electronics and automotive applications.

Equivalent

The FDN302P chip, a dual N-channel MOSFET, has several equivalent products. Common substitutes include the BSS138, BS170, and 2N7000. For higher power applications, consider the IRF520 or IRF540. Always check the specific electrical characteristics and package types to ensure compatibility with your circuit requirements.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire