FDMS6681Z

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FDMS6681Z

MOSFET P-CH 30V 21.1A/49A 8PQFN

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  • Mfr. Partie #FDMS6681Z
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  • Fiche de données
  • En stock4855

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Spécifications

Series PowerTrench®
Part Status Obsolete
Base Product Number FDMS6681
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 21.1A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.2mOhm @ 22.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 241 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 10380 pF @ 15 V
Power Dissipation (Max) 2.5W (Ta), 73W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6)
Package 8-PowerTDFN
Packaging Tape & Reel (TR)

Vue d'ensemble

Description

FDMS6681Z is a high-performance N-channel MOSFET designed for a variety of applications, including power management, DC-DC converters, and load switching. Key features include low on-resistance, high-speed switching capabilities, and a maximum drain-source voltage rating that allows for efficient operation in demanding environments.
This device is particularly valued for its thermal performance, enabling it to handle substantial power loads while minimizing heat generation. Its compact package design facilitates easy integration into circuit boards, making it suitable for consumer electronics, automotive applications, and industrial systems.
Overall, FDMS6681Z is a reliable choice for engineers seeking to optimize efficiency and performance in their electronic designs.

Features

The FDMS6681Z is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Low RDS(on): Provides efficient power handling with a low on-resistance, minimizing conduction losses.
2. High Current Rating: Capable of handling significant continuous drain current, making it suitable for demanding applications.
3. Fast Switching Speed: Optimized for quick switching, which enhances overall efficiency in power management circuits.
4. Voltage Rating: Supports high drain-to-source voltage, providing flexibility in various electronic applications.
5. Thermal Performance: Features a good thermal resistance, allowing for effective heat dissipation during operation.
6. Package Type: Typically available in a compact SO-8 package, facilitating space-saving designs in PCB layouts.
7. Applications: Commonly used in DC-DC converters, power management systems, and motor control circuits.
These features make the FDMS6681Z ideal for applications requiring reliable performance in power electronics.

Package

The FDMS6681Z is available in a SO-8 (Small Outline 8-lead) package type, which is a surface-mount package commonly used for power MOSFETs and other integrated circuits.

Pinout

The FDMS6681Z is a dual N-channel MOSFET packaged in a 8-lead SO-8 configuration. It features a pin count of 8.
Pin Functions:
1. Gate1 (G1): Control gate for the first N-channel MOSFET.
2. Source1 (S1): Source terminal for the first N-channel MOSFET.
3. Drain1 (D1): Drain terminal for the first N-channel MOSFET.
4. Gate2 (G2): Control gate for the second N-channel MOSFET.
5. Source2 (S2): Source terminal for the second N-channel MOSFET.
6. Drain2 (D2): Drain terminal for the second N-channel MOSFET.
7. Drain1 (D1) / Drain2 (D2): Common pins for multiple configurations.
8. Source1 (S1) / Source2 (S2): Common source connections for parallel usage.
This MOSFET is commonly used in power management and switching applications due to its low on-resistance and high-speed switching capabilities.

Manufacturer

The FDMS6681Z is manufactured by Fairchild Semiconductor, which is a subsidiary of ON Semiconductor. Fairchild Semiconductor is known for producing a wide range of semiconductor products, including power management solutions, analog devices, and discrete components. The company primarily serves various markets, including automotive, industrial, communications, and consumer electronics. Fairchild's expertise lies in developing efficient and reliable semiconductor solutions to meet the demands of modern electronic applications.

Application

The FDMS6681Z is a dual N-channel MOSFET primarily used in power management applications such as DC-DC converters, load switches, and power distribution. Its low on-resistance and high-speed switching capabilities make it suitable for applications in smartphones, tablets, laptops, and other portable devices. Additionally, it is utilized in electric vehicles and renewable energy systems for efficient power conversion and management.

Equivalent

The FDMS6681Z chip, a dual N-channel MOSFET, can be replaced by equivalent products like the SI5385DY, BSS138, and the NTMFS5C630NL. Always check the specific electrical characteristics (RDS(on), VGS, VDS, etc.) and package type to ensure compatibility in your application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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