FDMS6673BZ

Les images sont à titre de référence seulement

FDMS6673BZ

SMALL SIGNAL FIELD-EFFECT TRANSI

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Package Bulk
Series PowerTrench®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 15.2A (Ta), 28A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 6.8mOhm @ 15.2A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 130 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 5915 pF @ 15 V
PowerDissipation(Max) 2.5W (Ta), 73W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-PQFN (5x6)

Vue d'ensemble

Description

FDMS6673BZ is a high-performance N-channel MOSFET designed for various applications, including power management, DC-DC converters, and motor control. It features a low on-resistance (R_DS(on)), which minimizes power loss and improves efficiency in electronic circuits. The device is packaged in a compact, surface-mount format, facilitating easier integration into modern electronic designs.
Key specifications typically include a high breakdown voltage, fast switching speeds, and low gate charge, making it suitable for high-frequency applications. This MOSFET is often used in conjunction with other semiconductor components to optimize overall circuit performance.
In summary, FDMS6673BZ is a versatile and efficient MOSFET that plays a crucial role in enhancing the performance of various electronic systems.

Features

The FDMS6673BZ is a N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 45A, allowing it to manage high load conditions effectively.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 8 mΩ at a V_GS of 10V, which minimizes conduction losses and improves efficiency.
4. Fast Switching: The MOSFET is designed for rapid switching speeds, which is beneficial in applications like DC-DC converters and motor drivers.
5. Package: It is available in a compact SO-8 package, facilitating space-saving designs in board layouts.
6. Thermal Performance: Enhanced thermal characteristics enable better heat dissipation during operation.
These features make the FDMS6673BZ a reliable choice for automotive, industrial, and consumer electronics applications.

Package

The FDMS6673BZ is packaged in a 5x6 mm SO-8 (SMD) format.

Pinout

The FDMS6673BZ is a N-channel MOSFET packaged in a 8-Lead SOIC (Small Outline Integrated Circuit) or a similar configuration. It typically features a pin count of 8.
The primary functions of the FDMS6673BZ include:
1. Power Switching: It is commonly used for high-speed switching applications in power management circuits.
2. Load Control: The device can manage loads in DC-DC converters, motor drivers, and other power applications.
3. Low On-Resistance: This characteristic results in lower conduction losses, making it efficient for various applications.
Make sure to consult the specific datasheet for detailed electrical characteristics and pin assignments.

Manufacturer

The FDMS6673BZ is manufactured by Fairchild Semiconductor, which is a part of ON Semiconductor. Fairchild Semiconductor is known for designing and manufacturing a wide range of semiconductor solutions, including power management devices, discrete components, and integrated circuits. The company specializes in providing technologies for various applications, including automotive, industrial, and consumer electronics. Fairchild's products are aimed at improving energy efficiency and performance in electronic systems. The FDMS6673BZ itself is a Power MOSFET used in various applications requiring efficient power conversion and management.

Application

The FDMS6673BZ is a dual N-channel MOSFET designed for applications such as power management, DC-DC converters, synchronous rectification, and load switching in consumer electronics, automotive systems, and industrial equipment. Its low on-resistance and high-efficiency characteristics make it suitable for battery management systems and power supplies, enhancing performance in compact and energy-efficient designs.

Equivalent

The FDMS6673BZ is a dual N-channel MOSFET designed for power management applications. Equivalent products include the BSS123, IRLZ44N, and SiHP3R1E. However, ensure to check specific parameters like Vds, Id, Rds(on), and package type for precise compatibility. Always refer to datasheets for detailed specifications before substitution.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire