FDMC86139P

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FDMC86139P

MOSFET P-CH 100V 4.4A/15A 8MLP

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series PowerTrench®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 4.4A (Ta), 15A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 67mOhm @ 4.4A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 22 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 1335 pF @ 50 V
PowerDissipation(Max) 2.3W (Ta), 40W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-MLP (3.3x3.3)

Vue d'ensemble

Description

FDMC86139P is a high-performance N-channel MOSFET designed for various applications, including power management and switching. It features low on-resistance, high-speed switching capabilities, and is optimized for efficiency in DC-DC converters, power supplies, and motor control circuits. The device typically comes in a compact package, allowing for space-saving designs in electronic systems. Its specifications include a maximum drain-source voltage (VDS) and a specified continuous drain current (ID), making it suitable for high-current applications. The FDMC86139P is often favored in consumer electronics, automotive, and industrial applications due to its reliability and thermal performance. Its robust characteristics enable improved energy efficiency and reduced heat generation, contributing to overall system performance.

Features

The FDMC86139P is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include a maximum drain-source voltage (VDS) of 30V, a continuous drain current (ID) of 65A at 25°C, and a low on-resistance (RDS(on)) typically around 0.0145Ω, which enhances efficiency and thermal performance.
Additionally, it offers fast switching capabilities, making it suitable for high-frequency applications. The MOSFET is housed in a TO-220 package for effective heat dissipation, allowing for reliable operation under varying thermal conditions. It also includes a gate threshold voltage (VGS(th)) ranging from 2V to 4V, ensuring compatibility with low-voltage drive circuits.
Overall, the FDMC86139P is an ideal choice for use in DC-DC converters, motor drivers, and other power-related applications where efficiency and thermal management are crucial.

Package

The FDMC86139P is packaged in a PowerPAK SO-8 format. This package type features an 8-lead outline, suitable for surface mounting, and is designed for high-performance applications, offering good thermal and electrical characteristics.

Pinout

The FDMC86139P is a dual N-channel MOSFET with a pin count of 8. It is designed for applications in power management and switching. The pin functions are as follows:
1. Gate (G1) - Input gate for the first N-channel MOSFET.
2. Drain (D1) - Drain terminal for the first N-channel MOSFET.
3. Source (S1) - Source terminal for the first N-channel MOSFET.
4. Source (S2) - Source terminal for the second N-channel MOSFET.
5. Drain (D2) - Drain terminal for the second N-channel MOSFET.
6. Gate (G2) - Input gate for the second N-channel MOSFET.
7. Drain (D1) - Common drain for the first N-channel MOSFET.
8. Source (S2) - Common source for the second N-channel MOSFET.
This device is commonly used in high-efficiency switching applications due to its low on-resistance and fast switching capabilities.

Manufacturer

The FDMC86139P is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor was known for its expertise in power management and analog technology, providing a wide range of semiconductor solutions, including transistors, diodes, and integrated circuits. Founded in 1957, the company played a significant role in the development of the semiconductor industry, particularly in the area of integrated circuits. ON Semiconductor, which acquired Fairchild Semiconductor in 2016, continues to focus on energy-efficient solutions and has a broad portfolio that serves various sectors such as automotive, industrial, and consumer electronics.

Application

FDMC86139P is a N-channel MOSFET typically used in power management applications, including DC-DC converters, motor control, and power switching. Its characteristics make it suitable for high-efficiency power supplies, LED drivers, and battery management systems. Additionally, it is utilized in consumer electronics, automotive applications, and renewable energy systems for efficient power handling and thermal performance.

Equivalent

The FDMC86139P is a dual N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and AOD420. Ensure to check specifications such as voltage, current ratings, and package types for compatibility before substituting.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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