FDMC6675BZ

Les images sont à titre de référence seulement

FDMC6675BZ

MOSFET P-CH 30V 9.5A/20A 8MLP

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 9.5A (Ta), 20A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 14.4mOhm @ 9.5A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 65 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 2865 pF @ 15 V
PowerDissipation(Max) 2.3W (Ta), 36W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-MLP (3.3x3.3)

Vue d'ensemble

Description

The FDMC6675BZ is an N-channel MOSFET designed for high-efficiency power management applications. It features low on-resistance (R_DS(on)), which minimizes conduction losses and enhances thermal performance, making it suitable for use in DC-DC converters, power supplies, and motor control systems. The device typically has a maximum drain-source voltage (V_DS) of 55V and can handle continuous drain currents up to approximately 80A, depending on the thermal conditions. Its fast switching capabilities make it ideal for high-frequency applications. The FDMC6675BZ comes in a compact package, allowing for space-saving designs in modern electronics. Overall, its characteristics are tailored for applications requiring efficient power conversion and management.

Features

The FDMC6675BZ is a dual N-channel MOSFET designed for efficient power management applications. Key features include:
1. Low On-Resistance (Rds(on)): Offers low resistance, enhancing efficiency and reducing heat generation during operation.
2. High Voltage Rating: Typically rated for a maximum voltage of 30V, making it suitable for various applications.
3. Compact Package: Packaged in a DPAK form factor, which helps save space on PCBs and facilitates heat dissipation.
4. Fast Switching Speed: Provides quick switching capabilities, ideal for high-frequency applications.
5. Low Gate Charge (Qg): Ensures reduced power loss during the switching process, improving overall performance.
6. Robust Thermal Performance: Designed to handle significant power levels while maintaining low thermal resistance.
These attributes make the FDMC6675BZ ideal for applications in power supplies, motor control, and other areas requiring efficient power switching.

Package

The FDMC6675BZ is packaged in a 5mm x 6mm Dual Flat No-lead (DFN) format. This compact package design allows for efficient thermal performance and is suitable for various applications in power management and switching.

Pinout

The FDMC6675BZ is a high-performance N-channel MOSFET from ON Semiconductor with a 5x6 mm, 8-pin DFN (Dual Flat No Leads) package. It features a total of 8 pins, which are typically used for gate (G), drain (D), and source (S) connections.
Pin Functions:
1. G (Gate): Controls the MOSFET's switching on/off.
2. D (Drain): The channel where current flows out of the MOSFET when it is on.
3. S (Source): The channel where current flows into the MOSFET.
The device is designed for applications such as synchronous buck converters and has low R_DS(on) for improved efficiency. Always refer to the manufacturer's datasheet for detailed specifications and characteristics.

Manufacturer

The FDMC6675BZ is manufactured by Fairchild Semiconductor, which is a company known for producing a wide range of semiconductor products, including power management devices, signal conditioning solutions, and various types of transistors and integrated circuits. Fairchild Semiconductor primarily focuses on the development and manufacturing of components for automotive, industrial, and consumer electronics applications. The company is recognized for its innovations in power management and has a strong presence in the semiconductor industry. In 2016, Fairchild was acquired by ON Semiconductor, which has further expanded its capabilities and product offerings in the semiconductor market.

Application

The FDMC6675BZ is a dual N-channel MOSFET primarily used in power management applications, including DC-DC converters, synchronous rectifiers, and load switch applications. Its low on-resistance and high-speed switching capabilities make it suitable for automotive, industrial, and consumer electronics, particularly in applications requiring efficient power handling and thermal management.

Equivalent

The FDMC6675BZ is a power MOSFET driver, and equivalent products include the Texas Instruments TPS2813, the ON Semiconductor NCP81074, and the Infineon IRS2003. These alternatives provide similar features in terms of voltage and current ratings for driving MOSFETs in power applications. Always verify specifications for compatibility with your specific design requirements.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire