FDH50N50

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FDH50N50

MOSFET N-CH 500V 48A TO247-3

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  • Mfr. Partie #FDH50N50
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Spécifications

Package Tube
Series UniFET™
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 500 V
Current-ContinuousDrain(Id)@25°C 48A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 105mOhm @ 24A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 137 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 6460 pF @ 25 V
PowerDissipation(Max) 625W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

Vue d'ensemble

Description

The FDH50N50 is a high-power N-channel MOSFET designed for applications requiring efficient switching and high voltage handling. It features a maximum drain-source voltage (V_DS) of 50 volts and a continuous drain current (I_D) of up to 50 amps, making it suitable for power management in various electronic circuits.
This MOSFET is commonly used in power supplies, motor control, and fast switching applications due to its low on-resistance (R_DS(on)), which minimizes power loss and improves thermal performance. The device typically comes in a TO-220 package, facilitating heat dissipation and ease of mounting on heatsinks.
Key parameters include a threshold voltage (V_GS(th)) that allows for effective gate driving, and a rugged design that enhances reliability under high-stress conditions. Understanding its characteristics, including switching times and thermal limits, is crucial for optimizing circuit designs that leverage this MOSFET's capabilities.

Features

The FDH50N50 is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 50A, allowing for significant power delivery.
3. On-Resistance: The low on-resistance (R_DS(on)) reduces power loss and improves efficiency, typically around 0.5 ohms at V_GS = 10V.
4. Fast Switching: The device offers fast switching speeds, beneficial for applications like switching power supplies and motor drivers.
5. Thermal Performance: With a TO-220 package, it provides good thermal performance, facilitating heat dissipation.
6. Applications: Commonly used in power converters, inverters, and industrial equipment.
These features make the FDH50N50 suitable for high-efficiency power management and control in demanding electronic environments.

Package

The FDH50N50 is typically available in a TO-220 package type. This package is designed for efficient heat dissipation and is commonly used for power transistors and MOSFETs.

Pinout

The FDH50N50 is a High Voltage N-Channel MOSFET that comes in a TO-220 package, which typically has three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the switching of the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.

2. Drain (D): This is the pin through which the current enters the MOSFET from the load.

3. Source (S): This pin is where the current exits the MOSFET, usually connected to ground in low-side switching applications.
The FDH50N50 can handle high voltages (up to 500V) and currents (up to 50A), making it suitable for various applications, including power supplies, motor drives, and other high-voltage switching applications.

Manufacturer

The FDH50N50 is manufactured by Fairchild Semiconductor, which is a company specializing in the production of semiconductor products. Fairchild Semiconductor is known for its wide range of electronic components, including power transistors, diodes, and integrated circuits (ICs) used in various applications such as power management, automotive, and consumer electronics. Established in 1957, Fairchild has played a significant role in the development of the semiconductor industry and is recognized for its innovation in discrete and analog devices. As of 2016, Fairchild Semiconductor was acquired by ON Semiconductor, which continues to offer Fairchild’s product lines under its own brand, enhancing its portfolio in advanced semiconductor solutions.

Application

The FDH50N50 is a high-voltage, N-channel MOSFET primarily used in power electronics applications. Its key areas include switch mode power supplies (SMPS), motor control circuits, industrial automation, and renewable energy systems like solar inverters. Additionally, it is suitable for high-frequency applications and can be utilized in audio amplifiers and lighting control systems. Its high voltage and current handling capabilities make it ideal for various power management solutions.

Equivalent

The FDH50N50 is a N-channel MOSFET with a voltage rating of 500V and a current rating of 50A. Equivalent products include:
1. IRFBC40
2. STP50NF50
3. FQP50N50
4. MTP50N50
5. IXFH50N50
Always check the exact specifications, such as R_DS(on), gate threshold voltage, and package type, to ensure compatibility for your application.

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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