FDD86250

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FDD86250

MOSFET N-CH 150V 8A/50A DPAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V
Current-ContinuousDrain(Id)@25°C 8A (Ta), 50A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 22mOhm @ 8A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 33 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2110 pF @ 75 V
PowerDissipation(Max) 3.1W (Ta), 132W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Vue d'ensemble

Description

FDD86250 is a high-performance, N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for variety of applications, including power management and signal switching. It is known for its low on-resistance (Rds(on)), which enhances efficiency by minimizing power loss during operation. The device typically features a maximum drain-source voltage (Vds) rating around 60V, allowing it to handle substantial voltage while maintaining reliability. The FDD86250 is widely used in applications such as DC-DC converters, power supplies, and motor drives due to its fast switching capabilities and thermal stability. Its compact package size further facilitates integration into space-constrained designs. Overall, the FDD86250 is a versatile component suitable for modern electronic applications requiring efficient power handling.

Features

The FDD86250 is a power MOSFET known for its high efficiency and robust performance in various applications. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) up to 25V, making it suitable for low-voltage applications.

2. Current Rating: It can handle continuous drain current (I_D) up to around 50A, depending on thermal management.
3. Low On-Resistance (R_DS(on)): This characteristic minimizes conduction losses, improving overall efficiency in power conversion applications.
4. Fast Switching Speed: Ideal for high-frequency operations, reducing switching losses in applications like DC-DC converters and motor drivers.
5. Thermal Performance: Designed with a low thermal resistance, allowing for efficient heat dissipation and better thermal management.
6. TO-220 Package: This package type facilitates easy mounting and enhances thermal performance.
The FDD86250 is commonly used in power supplies, motor control, and other power management applications due to these features.

Package

The FDD86250 is typically available in a TO-220 package type. This package provides good thermal performance and is commonly used for power MOSFETs in various applications.

Pinout

The FDD86250 is a power MOSFET with a pin count of 8. It is designed for high-speed switching applications. The functions of its pins include:
1. Gate (G): Controls the ON/OFF state of the MOSFET.
2. Drain (D): The output pin where the load is connected.
3. Source (S): The reference point for the drain current and is typically connected to ground in an N-channel configuration.
4. Body Diode: Integrated within the MOSFET structure, allows current to flow in the reverse direction when the device is off.
The FDD86250 is commonly used in power management applications, motor control, and DC-DC converters due to its low on-resistance and high efficiency. Always refer to the specific datasheet for precise electrical characteristics and pin configurations.

Manufacturer

The FDD86250 is manufactured by ON Semiconductor, a global semiconductor company based in Phoenix, Arizona. ON Semiconductor specializes in designing, manufacturing, and marketing a wide range of semiconductor components, including power management, analog, and logic devices, as well as sensors and discrete components. The company serves various industries, including automotive, industrial, communications, and consumer electronics, focusing on energy-efficient solutions and innovative technologies. Founded in 1999, ON Semiconductor has grown through strategic acquisitions and partnerships, positioning itself as a leader in the semiconductor market.

Application

The FDD86250 is a high-performance N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, synchronous rectification, and power supply circuits for computing, telecommunications, and automotive systems. Additionally, it is suitable for battery management systems and electric vehicle power solutions due to its efficient switching capabilities and low on-resistance.

Equivalent

The FDD86250 is a dual N-channel MOSFET typically used in power management applications. Equivalent products include the IRF3205, AON7540, BSC026N06LS, and STP75NF75. Always verify compatibility in terms of specifications like voltage, current, and R_DS(on) before substitution.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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